scholarly journals Quantitative projections of reliability and performance for low-k/Cu interconnect systems

2002 ◽  
Author(s):  
K. Banerjee ◽  
A. Mehrotra ◽  
W. Hunter ◽  
K.C. Saraswat ◽  
K.E. Goodson ◽  
...  
Keyword(s):  
And Performance ◽  
Cu Interconnect ◽  
Interconnect Systems ◽  
Low K

Mesoporous SiO2 as low-k dielectric for integration in Cu/low-k interconnect systems

2006 ◽  
Vol 18 (S1) ◽  
pp. 31-36
Author(s):  
Swantje Frühauf ◽  
Stefan E. Schulz ◽  
Thomas Gessner
Keyword(s):  
Mesoporous Sio2 ◽  
Interconnect Systems ◽  
Low K

BCB-Based Dry Film low k Permanent Polymer with sub 4-μm Vias for Advanced WLP and FO-WLP Applications

2015 ◽  
Vol 2015 (1) ◽  
pp. 000079-000085 ◽  
Author(s):  
Michael Toepper ◽  
Tanja Braun ◽  
Robert Gernhardt ◽  
Martin Wilke ◽  
Piotr Mackowiak ◽  
...  
Keyword(s):  
Laser Scanning ◽  
New Technology ◽  
Side Wall ◽  
Wafer Level ◽  
Major Barrier ◽  
Wafer Level Packaging ◽  
And Performance ◽  
Low K ◽  
Metallization Process ◽  
Dry Film

There is a strong demand to increase the routing density of the RDL to match the requirements for future microelectronic systems which are mainly miniaturization and performance. Photo-resists for structuring the metallization or acting as a mold for electroplating are common for very fine lines and spaces due to the developments in the front-end processing. For example chemical amplified Photo-resists are now moving in the back-end and wafer level packaging process. The results are mainly governed by the performance of the equipment i.e. the photo-tool. This is different for the permanent dielectric polymer material. The major difference in photo-resists and dielectric photo-polymer are the different functions of the material systems. Photo-resists are only temporary masks for subsequent process steps like etching and plating. This is different for the photo-polymers which are a permanent part of the future systems. In this paper a new technology is discussed which uses a laser scanning ablation process and BCB-Based Dry Film low k Permanent Polymer. Laser ablation of polymers is in principle not a new technology. Low speed and high cost was the major barrier. But the combination of a scanning technology together with quartz masks has opened this technology to overcome the limitation of the current photo-polymer process. The new technology is described in detail and the results of structuring BCB-Based Films down to less than 4 μm via diameter in a 15 μm thick film has been shown. The via side wall can be controlled by the fluence of the laser pulse. Test structures have been designed and fabricated to demonstrate the excellent electrical resistivity of the vias using a two-layer metallization process.

Qualification of Resist Strip Process for Ultra Low-k/Cu Interconnect

2005 ◽  
pp. 345-348
Author(s):  
Han Xu ◽  
Amy Shen ◽  
Vlad Tarasov ◽  
Brian White ◽  
Josh Wolf
Keyword(s):  
Cu Interconnect ◽  
Low K

Modeling of TDDB in advanced Cu interconnect systems under BTS conditions

2012 ◽  
Vol 92 ◽  
pp. 107-110 ◽  
Author(s):  
P. Bělský ◽  
R. Streiter ◽  
H. Wolf ◽  
S.E. Schulz ◽  
O. Aubel ◽  
...  
Keyword(s):  
Cu Interconnect ◽  
Interconnect Systems

Modeling of Thermo-Mechanical Stresses in Copper Interconnect/Low-k Dielectric Systems

2005 ◽  
Author(s):  
Y.-L. Shen
Keyword(s):  
Structural Integrity ◽  
Temperature Response ◽  
Future Generation ◽  
Interface Fracture ◽  
Deformation Pattern ◽  
Barrier Layers ◽  
Copper Interconnect ◽  
On Chip ◽  
Interconnect Systems ◽  
Low K

Systematic finite element analyses are carried out to model the thermomechanical stresses in on-chip copper interconnect systems. Constitutive behavior of encapsulated copper films, determined by experimentally measuring the stress-temperature response during thermal cycling, is used in the model for predicting stresses in copper interconnect/low-k dielectric structures. Various combinations of oxide and polymer-based low-k dielectric schemes are considered. The evolution of stresses and deformation pattern in the dual-damascene copper, barrier layers, and the dielectrics is seen to have direct connections to the structural integrity of contemporary and future-generation devices. In particular, stresses experienced by the thin barrier layers and the mechanically weak low-k dielectrics are critically assessed. A parametric analysis on the influence of low-k material properties is also conducted. Practical implications in reliability issues such as voiding, interface fracture, electromigration and dielectric failure are discussed.

TiN Metal Hardmask Residue Removal Formulation Development for Advanced Porous Low-K and Cu Interconnect Application

2014 ◽  
Vol 219 ◽  
pp. 217-220 ◽  
Author(s):  
Hua Cui
Keyword(s):  
Aspect Ratio ◽  
Metal Deposition ◽  
Formulation Development ◽  
Chemical Cleaning ◽  
Residue Removal ◽  
Profile Control ◽  
Cu Interconnect ◽  
Tin Metal ◽  
Technology Nodes ◽  
Low K

TiN metal hardmask has been used to improve etch selectivity to low-k materials and thereby gain better profile control. For 14 nm and smaller technology nodes, it is required that the TiN hardmask is completely removed in order to improve the aspect ratio for subsequent reliable metal deposition. Thus, a chemical cleaning formulation with high TiN etch selectivity toward Cu and low-k is required.

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