Modeling of TDDB in advanced Cu interconnect systems under BTS conditions

2012 ◽  
Vol 92 ◽  
pp. 107-110 ◽  
Author(s):  
P. Bělský ◽  
R. Streiter ◽  
H. Wolf ◽  
S.E. Schulz ◽  
O. Aubel ◽  
...  
2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Myungwoo Son ◽  
Jaewon Jang ◽  
Yongsu Lee ◽  
Jungtae Nam ◽  
Jun Yeon Hwang ◽  
...  

AbstractHere, we demonstrate the fabrication of a Cu-graphene heterostructure interconnect by the direct synthesis of graphene on a Cu interconnect with an enhanced performance. Multilayer graphene films were synthesized on Cu interconnect patterns using a liquid benzene or pyridine source at 400 °C by atmospheric pressure chemical vapor deposition (APCVD). The graphene-capped Cu interconnects showed lower resistivity, higher breakdown current density, and improved reliability compared with those of pure Cu interconnects. In addition, an increase in the carrier density of graphene by doping drastically enhanced the reliability of the graphene-capped interconnect with a mean time to failure of >106 s at 100 °C under a continuous DC stress of 3 MA cm−2. Furthermore, the graphene-capped Cu heterostructure exhibited enhanced electrical properties and reliability even if it was a damascene-patterned structure, which indicates compatibility with practical applications such as next-generation interconnect materials in CMOS back-end-of-line (BEOL).


1997 ◽  
Author(s):  
Nickolaos E. Strifas ◽  
Chandrasekhar Pusarla ◽  
Aristos Christou

1991 ◽  
Vol 6 (7) ◽  
pp. 1498-1501 ◽  
Author(s):  
Paul A. Flinn

Since copper has some advantages relative to aluminum as an interconnection material, it is appropriate to investigate its mechanical properties in order to be prepared in advance for possible problems, such as the cracks and voids that have plagued aluminum interconnect systems. A model previously used to interpret the behavior of aluminum films proves to be, with minor modification, also applicable to copper. Although the thermal expansion of copper is closer to that of silicon and, consequently, the thermally induced strains are smaller, the much larger elastic modulus of copper results in substantially higher stresses. This has implications for the interaction of copper lines with dielectrics.


2009 ◽  
Vol 18 (07) ◽  
pp. 1263-1285 ◽  
Author(s):  
GUOQING CHEN ◽  
EBY G. FRIEDMAN

With higher operating frequencies, transmission lines are required to model global on-chip interconnects. In this paper, an accurate and efficient solution for the transient response at the far end of a transmission line based on a direct pole extraction of the system is proposed. Closed form expressions of the poles are developed for two special interconnect systems: an RC interconnect and an RLC interconnect with zero driver resistance. By performing a system conversion, the poles of an interconnect system with general circuit parameters are solved. The Newton–Raphson method is used to further improve the accuracy of the poles. Based on these poles, closed form expressions for the step and ramp response are determined. Higher accuracy can be obtained with additional pairs of poles. The computational complexity of the model is proportional to the number of pole pairs. With two pairs of poles, the average error of the 50% delay is 1% as compared with Spectre simulations. With ten pairs of poles, the average error of the 10%-to-90% rise time and the overshoots is 2% and 1.9%, respectively. Frequency dependent effects are also successfully included in the proposed method and excellent match is observed between the proposed model and Spectre simulations.


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