defect character
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2017 ◽  
Vol 124 ◽  
pp. 383-396 ◽  
Author(s):  
D.L. Medlin ◽  
K. Hattar ◽  
J.A. Zimmerman ◽  
F. Abdeljawad ◽  
S.M. Foiles

2015 ◽  
Vol 21 (S3) ◽  
pp. 1455-1456
Author(s):  
D.L. Medlin ◽  
K. Hattar ◽  
J. Zimmerman ◽  
F. Abdeljawad ◽  
S.M. Foiles

2010 ◽  
Vol 107 (7) ◽  
pp. 073525 ◽  
Author(s):  
J. Smalc-Koziorowska ◽  
G. Tsiakatouras ◽  
A. Lotsari ◽  
A. Georgakilas ◽  
G. P. Dimitrakopulos
Keyword(s):  

1998 ◽  
Vol 552 ◽  
Author(s):  
P. Shang ◽  
T.T. Cheng ◽  
M. Aindow

ABSTRACTThe defect character of steps on lamellar γ/α2 interfaces in a quinternary TiAl-based alloy has been studied using high resolution transmission electron microscopy. The interfaces consisted of atomically flat coherent terraces separated by interfacial steps across equal even numbers of {111}γ and (0002)α2 planes. Circuit mapping was used to identify the Burgers vectors of these steps from lattice images obtained at [101]γ and [110]γ zone axes. It was found that the Burgers vectors exhibited by the two-layer steps are different from those reported previously and are consistent with those expected for perfect disconnections as described by Pond's topological theory of interfacial defects, and not with the usual partial dislocation model.


1997 ◽  
Vol 53 (3) ◽  
pp. 341-351 ◽  
Author(s):  
G. P. Dimitrakopulos ◽  
V. P. Dravid ◽  
Th. Karakostas ◽  
R. C. Pond

1997 ◽  
Vol 4 (1-2) ◽  
Author(s):  
G.P. Dimitrakopulos ◽  
TH. Karakostas ◽  
R.C. Pond
Keyword(s):  

1987 ◽  
Vol 104 ◽  
Author(s):  
Rodney A. Herring

ABSTRACTThe character of extended defects formed in high-energy S-ion implanted and rapid thermal annealed (RTA'd) Si has been found by transmission electron microscopy (TEM) to be dependent on the depth at which the defects have formed in the ion-implanted regions. Si implanted with 6 MeV S-ions and RTA'd at 1000°C for 10 s showed a buried layer of extended defects with unfaulted loops towards the top and faulted loops towards the bottom. At higher S fluences, all the loops were unfaulted, some loops coalesced to form a dislocation network, and SiS precipitates were formed. At higher RTA temperatures, all the loops were unfaulted. A few possibilities that could explain the difference in defect character will be discussed.


1983 ◽  
Vol 2 (9) ◽  
pp. 475-479 ◽  
Author(s):  
C. N. Park ◽  
Jai-Young Lee ◽  
G. W. Hong

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