Focused-ion-beam-induced insulator deposition at decreased beam current density

2002 ◽  
Author(s):  
M. Abramo ◽  
E. Adams ◽  
M. Gibson ◽  
L. Hahn ◽  
A. Doyle
Keyword(s):  
Current Density ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Beam Current Density

Measurements of beam current density and space potential in a highly focused ion beam of extremely low energy

2019 ◽  
Vol 28 (6) ◽  
pp. 065010
Author(s):  
Yoichi Hirano ◽  
Yutaka Fujiwara ◽  
Satoru Kiyama ◽  
Yamato Adachi ◽  
Hajime Sakakita
Keyword(s):  
Current Density ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Low Energy ◽  
Beam Current Density ◽  
Space Potential

Simulations and experiments of intense ion beam current density compression in space and time

2009 ◽  
Vol 16 (5) ◽  
pp. 056701 ◽  
Author(s):  
A. B. Sefkow ◽  
R. C. Davidson ◽  
E. P. Gilson ◽  
I. D. Kaganovich ◽  
A. Anders ◽  
...  
Keyword(s):  
Current Density ◽  
Ion Beam ◽  
Beam Current ◽  
Beam Current Density ◽  
Space And Time

Effects of Dwell Time and Current Density on Ion-Induced Deposition of Tungsten

1990 ◽  
Vol 181 ◽  
Author(s):  
Khanh Q. Tran ◽  
Yuuichi Madokoro ◽  
Tohru Ishitani ◽  
Cary Y. Yang
Keyword(s):  
Current Density ◽  
Dwell Time ◽  
Ion Beam ◽  
Dose Range ◽  
Beam Current ◽  
Beam Current Density ◽  
High Dose ◽  
Beam Diameter ◽  
Film Resistivity ◽  
Deposition Yield

ABSTRACT30-keV focused Ga+ ion beam was used for induced deposition of small-area tungsten thin films from W(CO)6 on Si and SiO2. Deposition yield, calculated assuming pure tungsten depositions, depends on dwell time (beam diameter/scan speed) and beam current density. High current density and/or long dwell time are known to cause low deposition yield because of the depletion of adsorbed gas molecules during ion beam irradiation. Based on a model taking this effect into account, numerical fitting was carried out. The reaction cross-section was estimated to be 1.4 × 10−14 cm2. For doses below 1017 ions/cm2, film resistivity decreases with increasing dose. This was confirmed for several dwell times. However, for doses above 1017 ions/cm2, film resistivity remains independent of dose. In this “high”-dose range, variation of beam current density has little effect on film resistivity. AES analyses revealed a consistency between film composition and resistivity. For a “high”-dose film with a resistivity of 190 μΩ-cm, the approximate tungsten content was 50 at%.

Characterization of the Ion Beam Current Density of the RF Ion Source with Flat and Convex Extraction Systems

Silicon ◽  
2018 ◽  
Vol 10 (6) ◽  
pp. 2743-2749 ◽  
Author(s):  
Maryam Salehi ◽  
Ali Asghar Zavarian ◽  
Ali Arman ◽  
Fatemeh Hafezi ◽  
Ghasem Amraee Rad ◽  
...  
Keyword(s):  
Current Density ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Beam Current Density ◽  
Rf Ion Source

Further Inquiry into Xe Primary Ion Species for Circuit Edit Application

2017 ◽  
Author(s):  
Valery Ray ◽  
Ali Hadjikhani ◽  
Joseph Favata ◽  
Seyedeh Ahmadi ◽  
Sina Shahbazmohamadi
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Sources ◽  
Advanced Technology ◽  
Semiconductor Materials ◽  
Beam Current Density ◽  
Fundamental Limitations ◽  
Technology Nodes ◽  
Ion Species

Abstract Widespread adoption and significant developments in Focused Ion Beam technology has made FIB/SEM instrumentation a commonplace sample preparation tool. Fundamental limitations inherent to Ga ion species complicate usage of Ga+ FIB instruments for the modification of semiconductor devices on advanced technology nodes. Said limitations are fueling interest in exploring alternative primary species and ion beam technologies for circuit edit applications. Exploratory tests of etching typical semiconductor materials with Xe ion beams generated from two plasma ion sources confirmed advantages of Xe+ as a potential ion species for gas-assisted etching of semiconductor materials, but also revealed potential complications including, swelling of metal and Xe+ retention within the material arising from excessive Xe ion beam current density.

Effect of Focused Ion Beam Imaging on the Crystallinity of InAs

2015 ◽  
Vol 21 (6) ◽  
pp. 1426-1432
Author(s):  
Wei-Chieh Chen ◽  
Tien-Hao Huang ◽  
Kuan-Chao Chen ◽  
Hao-Hsiung Lin
Keyword(s):  
Correlation Length ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Broad Band ◽  
Scanning Speed ◽  
Beam Current ◽  
Beam Current Density ◽  
Process Conditions ◽  
Severe Damage ◽  
Independent Behavior

AbstractWe investigated the effect of focused ion beam (FIB) imaging on the crystallinity of InAs using Raman scattering. A spatial correlation model was used to fit the broad band induced by FIB imaging. The fitting gives a correlation length of ~42 Å for the noisiest image condition (with an ion fluence of 7.4×1010 cm−2), implying severe damage in the surface layer of InAs. However, further increasing the fluence by several orders of magnitude only decreases the correlation length from 42 to 35 Å. We attribute the severe damage to the high beam current density and the low scanning speed of the FIB imaging process. These process conditions, along with low InAs thermal conductivity, also leads to a high local temperature in the exposed region that largely annihilated the defects and resulted in the nearly fluence-independent behavior.

Analytical and numerical studies of positive ion beam expansion for surface treatment applications

2018 ◽  
Vol 81 (1) ◽  
pp. 10802 ◽  
Author(s):  
Soumya Lounes-Mahloul ◽  
Abderrezeg Bendib ◽  
Noureddine Oudini
Keyword(s):  
Current Density ◽  
Ion Beam ◽  
Beam Current ◽  
Critical Distance ◽  
Extraction System ◽  
Beam Current Density ◽  
Significant Discrepancy ◽  
2D Simulation ◽  
Preformed Plasma ◽  
Positive Ion

The aim of this work is to study the expansion in vacuum, of a positive ion beam with the use of one dimensional (1D) analytic model and a two dimensional Particle-In-Cell (2D-PIC) simulation. The ion beam is extracted and accelerated from preformed plasma by an extraction system composed of two polarized parallel perforated grids. The results obtained with both approaches reveal the presence of a potential barrier downstream the extraction system which tends to reflect the ion flux. The dependence of the critical distance for which all extracted ions are reflected, is investigated as a function of the extracted ion beam current density. In particular, it is shown that the 1D model recovers the well-known Child-Langmuir law and that the 2D simulation presents a significant discrepancy with respect to the 1D prediction. Indeed, for a given value of current density, the transverse effects lead to a greater critical distance.

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