Simulations and experiments of intense ion beam current density compression in space and time

2009 ◽  
Vol 16 (5) ◽  
pp. 056701 ◽  
Author(s):  
A. B. Sefkow ◽  
R. C. Davidson ◽  
E. P. Gilson ◽  
I. D. Kaganovich ◽  
A. Anders ◽  
...  
Keyword(s):  
Current Density ◽  
Ion Beam ◽  
Beam Current ◽  
Beam Current Density ◽  
Space And Time

Measurements of beam current density and space potential in a highly focused ion beam of extremely low energy

2019 ◽  
Vol 28 (6) ◽  
pp. 065010
Author(s):  
Yoichi Hirano ◽  
Yutaka Fujiwara ◽  
Satoru Kiyama ◽  
Yamato Adachi ◽  
Hajime Sakakita
Keyword(s):  
Current Density ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Low Energy ◽  
Beam Current Density ◽  
Space Potential

Effects of Dwell Time and Current Density on Ion-Induced Deposition of Tungsten

1990 ◽  
Vol 181 ◽  
Author(s):  
Khanh Q. Tran ◽  
Yuuichi Madokoro ◽  
Tohru Ishitani ◽  
Cary Y. Yang
Keyword(s):  
Current Density ◽  
Dwell Time ◽  
Ion Beam ◽  
Dose Range ◽  
Beam Current ◽  
Beam Current Density ◽  
High Dose ◽  
Beam Diameter ◽  
Film Resistivity ◽  
Deposition Yield

ABSTRACT30-keV focused Ga+ ion beam was used for induced deposition of small-area tungsten thin films from W(CO)6 on Si and SiO2. Deposition yield, calculated assuming pure tungsten depositions, depends on dwell time (beam diameter/scan speed) and beam current density. High current density and/or long dwell time are known to cause low deposition yield because of the depletion of adsorbed gas molecules during ion beam irradiation. Based on a model taking this effect into account, numerical fitting was carried out. The reaction cross-section was estimated to be 1.4 × 10−14 cm2. For doses below 1017 ions/cm2, film resistivity decreases with increasing dose. This was confirmed for several dwell times. However, for doses above 1017 ions/cm2, film resistivity remains independent of dose. In this “high”-dose range, variation of beam current density has little effect on film resistivity. AES analyses revealed a consistency between film composition and resistivity. For a “high”-dose film with a resistivity of 190 μΩ-cm, the approximate tungsten content was 50 at%.

Characterization of the Ion Beam Current Density of the RF Ion Source with Flat and Convex Extraction Systems

Silicon ◽  
2018 ◽  
Vol 10 (6) ◽  
pp. 2743-2749 ◽  
Author(s):  
Maryam Salehi ◽  
Ali Asghar Zavarian ◽  
Ali Arman ◽  
Fatemeh Hafezi ◽  
Ghasem Amraee Rad ◽  
...  
Keyword(s):  
Current Density ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Source ◽  
Beam Current Density ◽  
Rf Ion Source

Analytical and numerical studies of positive ion beam expansion for surface treatment applications

2018 ◽  
Vol 81 (1) ◽  
pp. 10802 ◽  
Author(s):  
Soumya Lounes-Mahloul ◽  
Abderrezeg Bendib ◽  
Noureddine Oudini
Keyword(s):  
Current Density ◽  
Ion Beam ◽  
Beam Current ◽  
Critical Distance ◽  
Extraction System ◽  
Beam Current Density ◽  
Significant Discrepancy ◽  
2D Simulation ◽  
Preformed Plasma ◽  
Positive Ion

The aim of this work is to study the expansion in vacuum, of a positive ion beam with the use of one dimensional (1D) analytic model and a two dimensional Particle-In-Cell (2D-PIC) simulation. The ion beam is extracted and accelerated from preformed plasma by an extraction system composed of two polarized parallel perforated grids. The results obtained with both approaches reveal the presence of a potential barrier downstream the extraction system which tends to reflect the ion flux. The dependence of the critical distance for which all extracted ions are reflected, is investigated as a function of the extracted ion beam current density. In particular, it is shown that the 1D model recovers the well-known Child-Langmuir law and that the 2D simulation presents a significant discrepancy with respect to the 1D prediction. Indeed, for a given value of current density, the transverse effects lead to a greater critical distance.

Effects of Beam Current Density on Ion Beam Synthesis OF SiC

2001 ◽  
Vol 680 ◽  
Author(s):  
D.H. Chen ◽  
S.P. Wong ◽  
J.K.N. Lindner
Keyword(s):  
Current Density ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Metal Vapor ◽  
Beam Current ◽  
Ion Source ◽  
Vacuum Arc ◽  
Beam Current Density ◽  
Carbon Clusters ◽  
High Dose

ABSTRACTThin SiC layers were synthesized by high dose C implantation into silicon using a metal vapor vacuum arc ion source at various conditions. Characterization of the ion beam synthesized SiC layers was performed using various techniques including x-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) absorption, and Raman spectroscopy. The XPS results showed that for samples with over-stoichiometric implant doses, if the implant beam current density was not high enough, even after prolonged thermal annealing at high temperatures, the as-implanted gaussian-like carbon depth profile remained unchanged. However, if the implant beam current density was sufficiently high, there was significant carbon redistribution during annealing, so that a thicker stoichiometric SiC layer can be formed after annealing. The XPS and Raman results also showed that there were carbon clusters formed in the as-implanted layers for the low beam current density implanted samples, while the formation of such carbon clusters was minimal in the high beam current density as-implanted samples. The effect of beam current density on the fraction of different bonding states of the implanted carbon atoms was studied.

A technique for accurate measurements of ion beam current density using a Faraday cup

2000 ◽  
Vol 71 (9) ◽  
pp. 3326-3330 ◽  
Author(s):  
C. E. Sosolik ◽  
A. C. Lavery ◽  
E. B. Dahl ◽  
B. H. Cooper
Keyword(s):  
Current Density ◽  
Ion Beam ◽  
Beam Current ◽  
Beam Current Density ◽  
Faraday Cup
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