Evaluation of the sensitivity of a COTS 90-nm SRAM memory at low bias voltage

2016 ◽  
Author(s):  
Juan Antonio Clemente ◽  
Guillaume Hubert ◽  
Francisco J. Franco ◽  
Francesca Villa ◽  
Maud Baylac ◽  
...  
Keyword(s):  
Bias Voltage ◽  
Sram Memory

New type electron gun with electrostatic and electromagnetic lenses

1978 ◽  
Vol 36 (1) ◽  
pp. 62-63
Author(s):  
T. Ichinokawa ◽  
H. Maeda
Keyword(s):  
Electron Microscopy ◽  
Electron Beam ◽  
Optimum Condition ◽  
Bias Voltage ◽  
Electron Gun ◽  
Charge Effect ◽  
Micro Fabrication ◽  
Maximum Brightness ◽  
New Type ◽  
The Ideal

I. IntroductionThermionic electron gun with the Wehnelt grid is popularly used in the electron microscopy and electron beam micro-fabrication. It is well known that this gun could get the ideal brightness caluculated from the Lengumier and Richardson equations under the optimum condition. However, the design and ajustment to the optimum condition is not so easy. The gun has following properties with respect to the Wehnelt bias; (1) The maximum brightness is got only in the optimum bias. (2) In the larger bias than the optimum, the brightness decreases with increasing the bias voltage on account of the space charge effect. (3) In the smaller bias than the optimum, the brightness decreases with bias voltage on account of spreading of the cross over spot due to the aberrations of the electrostatic immersion lens.In the present experiment, a new type electron gun with the electrostatic and electromagnetic lens is designed, and its properties are examined experimentally.

UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

1992 ◽  
Vol 50 (2) ◽  
pp. 1144-1145
Author(s):  
T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen
Keyword(s):  
High Temperature ◽  
Relaxation Process ◽  
Thermal Effect ◽  
Bias Voltage ◽  
Silicon Surface ◽  
Growth Process ◽  
Tunneling Current ◽  
Fabrication Technique ◽  
Nano Fabrication ◽  
Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

Analysis of the Bias Dependent Spectral Response of a-SiC:H p-i-n Photodiode

2002 ◽  
Vol 715 ◽  
Author(s):  
P. Louro ◽  
A. Fantoni ◽  
Yu. Vygranenko ◽  
M. Fernandes ◽  
M. Vieira
Keyword(s):  
Bias Voltage ◽  
Voltage Dependence ◽  
Spectral Response ◽  
Surface Recombination ◽  
Electrical Field ◽  
Field Reversal ◽  
Current Voltage ◽  
Voltage Dependent ◽  
And Inversion ◽  
Device Operation

AbstractThe bias voltage dependent spectral response (with and without steady state bias light) and the current voltage dependence has been simulated and compared to experimentally obtained values. Results show that in the heterostructures the bias voltage influences differently the field and the diffusion part of the photocurrent. The interchange between primary and secondary photocurrent (i. e. between generator and load device operation) is explained by the interaction of the field and the diffusion components of the photocurrent. A field reversal that depends on the light bias conditions (wavelength and intensity) explains the photocurrent reversal. The field reversal leads to the collapse of the diode regime (primary photocurrent) launches surface recombination at the p-i and i-n interfaces which is responsible for a double-injection regime (secondary photocurrent). Considerations about conduction band offsets, electrical field profiles and inversion layers will be taken into account to explain the optical and voltage bias dependence of the spectral response.

Bias-Voltage-Dependent Subcircuit Model for Millimeter-Wave CMOS Circuit

2012 ◽  
Vol E95.C (6) ◽  
pp. 1077-1085 ◽  
Author(s):  
Kosuke KATAYAMA ◽  
Mizuki MOTOYOSHI ◽  
Kyoya TAKANO ◽  
Ryuichi FUJIMOTO ◽  
Minoru FUJISHIMA
Keyword(s):  
Millimeter Wave ◽  
Bias Voltage ◽  
Cmos Circuit ◽  
Voltage Dependent

Classification of IC Process Deformation Characteristics Using Memory Fail Bitmaps

2004 ◽  
Author(s):  
T. Zanon ◽  
W. Maly
Keyword(s):  
Geometric Characterization ◽  
Deformation Characteristics ◽  
Analysis Study ◽  
Preliminary Results ◽  
Failure Patterns ◽  
Yield Learning ◽  
Sram Memory ◽  
Viable Approach ◽  
Ic Technology

Abstract Building a portfolio of deformations is the key step for building better defect models for the test and yield learning domain. A viable approach to achieve this goal is through geometric characterization and classification of failure patterns found on memory fail bitmaps. In this paper, we present preliminary results on how to build such a portfolio of deformations for an IC technology of interest based on a fail bitmap analysis study conducted on large, modern SRAM memory products.

scholarly journals Electrode and electrolyte configurations for low frequency motion energy harvesting based on reverse electrowetting

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Pashupati R. Adhikari ◽  
Nishat T. Tasneem ◽  
Russell C. Reid ◽  
Ifana Mahbub
Keyword(s):  
Energy Harvesting ◽  
Bias Voltage ◽  
Energy Harvester ◽  
Superior Performance ◽  
Maximum Output ◽  
Electrowetting On Dielectric ◽  
External Bias ◽  
Motion Energy ◽  
Ac Current ◽  
Self Powered

AbstractIncreasing demand for self-powered wearable sensors has spurred an urgent need to develop energy harvesting systems that can reliably and sufficiently power these devices. Within the last decade, reverse electrowetting-on-dielectric (REWOD)-based mechanical motion energy harvesting has been developed, where an electrolyte is modulated (repeatedly squeezed) between two dissimilar electrodes under an externally applied mechanical force to generate an AC current. In this work, we explored various combinations of electrolyte concentrations, dielectrics, and dielectric thicknesses to generate maximum output power employing REWOD energy harvester. With the objective of implementing a fully self-powered wearable sensor, a “zero applied-bias-voltage” approach was adopted. Three different concentrations of sodium chloride aqueous solutions (NaCl-0.1 M, NaCl-0.5 M, and NaCl-1.0 M) were used as electrolytes. Likewise, electrodes were fabricated with three different dielectric thicknesses (100 nm, 150 nm, and 200 nm) of Al2O3 and SiO2 with an additional layer of CYTOP for surface hydrophobicity. The REWOD energy harvester and its electrode–electrolyte layers were modeled using lumped components that include a resistor, a capacitor, and a current source representing the harvester. Without using any external bias voltage, AC current generation with a power density of 53.3 nW/cm2 was demonstrated at an external excitation frequency of 3 Hz with an optimal external load. The experimental results were analytically verified using the derived theoretical model. Superior performance of the harvester in terms of the figure-of-merit comparing previously reported works is demonstrated. The novelty of this work lies in the combination of an analytical modeling method and experimental validation that together can be used to increase the REWOD harvested power extensively without requiring any external bias voltage.

Monolithic 3D Enabled Processing-in- SRAM Memory

2020 ◽  
Author(s):  
Vijaykrishnan Narayanan ◽  
Nagadastagiri Challapalle ◽  
Ikenna Okafor ◽  
Srivatsa Srinivasa ◽  
Nicholas Jao
Keyword(s):  
Sram Memory

Low Bias Voltage Dry Etching of InP by Inductively Coupled Plasma Using SiCl4/Ar

1998 ◽  
Vol 37 (Part 1, No. 12A) ◽  
pp. 6655-6656 ◽  
Author(s):  
Akihiro Matsutani ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Bias Voltage ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Inductively Coupled
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