Effect of ion energy on charge loss from Floating Gate memories

2007 ◽  
Author(s):  
G. Cellere ◽  
A. Paccagnella ◽  
A. Visconti ◽  
M. Bonanomi ◽  
S. Beltrami ◽  
...  
Keyword(s):  
Floating Gate ◽  
Ion Energy ◽  
Charge Loss

Effect of Ion Energy on Charge Loss From Floating Gate Memories

2008 ◽  
Vol 55 (4) ◽  
pp. 2042-2047 ◽  
Author(s):  
Giorgio Cellere ◽  
Alessandro Paccagnella ◽  
Angelo Visconti ◽  
Mauro Bonanomi ◽  
Silvia Beltrami ◽  
...  
Keyword(s):  
Floating Gate ◽  
Ion Energy ◽  
Charge Loss

Impact of heavy ion energy and species on single-event upset in commercial floating gate cells

2021 ◽  
Vol 120 ◽  
pp. 114128
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Peng-Fei Zhai ◽  
Li Cai ◽  
Tao Liu ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Floating Gate ◽  
Single Event Upset ◽  
Single Event ◽  
Ion Energy

Radiation Induced Charge Loss Mechanisms Across the Dielectrics of Floating Gate Flash Memories

2019 ◽  
Vol 6 (3) ◽  
pp. 807-843
Author(s):  
Giorgio Cellere ◽  
Andrea Cester ◽  
Alessandro Paccagnella
Keyword(s):  
Floating Gate ◽  
Flash Memories ◽  
Charge Loss ◽  
Radiation Induced ◽  
Induced Charge ◽  
Loss Mechanisms

Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO2 Nanocomposite Thin Film Prepared by Sputtering Method

2010 ◽  
Vol 1250 ◽  
Author(s):  
Tsung-Eong Hsieh ◽  
Kuo-Chang Chiang
Keyword(s):  
Floating Gate ◽  
Cross Sectional ◽  
Nanocomposite Layer ◽  
Voltage Sweep ◽  
Charge Loss ◽  
Floating Gate Memory ◽  
Voltage Stress ◽  
Antimony Oxides ◽  
One Step ◽  
Time Test

AbstractAgInSbTe (AIST)-SiO2 nanocomposite layer prepared by a one-step sputtering process utilizing target-attachment method was implanted in the nonvolatile floating gate memory (NFGM) devices. Device sample subjected to post annealing at 400°C for 2 min in atmospheric ambient exhibited a significant hysteresis memory window (ΔVFB) shift = 5.91V and charge density = 5.22×12 cm-2 after ±8V voltage sweep. During the retention time test, a ΔVFB shift about 3.50 V and charge loss about 28.4% were observed in the sample after a ±5V voltage stress for 104 sec. Cross-sectional TEM revealed that the nanocomposite layer contains the crystalline AIST nanoparticles with the sizes about 5 to 7 nm embedded in SiO2 matrix. XPS analysis indicated that annealing induces the reduction of antimony oxides to form metallic Sb nanocrystals and suppresses the oxygen defects and charge loss in nanocomposite layer. Analytical results illustrated that the utilization of AIST-SiO2 nanocomposite layer may simplify the preparation of NFGM device with satisfactory electrical properties, implying a promising feasibility of such a nanocomposite layer to NFGM devices.

Effect of different total ionizing dose sources on charge loss from programmed floating gate cells

2005 ◽  
Vol 52 (6) ◽  
pp. 2372-2377 ◽  
Author(s):  
G. Cellere ◽  
A. Paccagnella ◽  
A. Visconti ◽  
M. Bonanomi ◽  
A. Candelori ◽  
...  
Keyword(s):  
Floating Gate ◽  
Total Ionizing Dose ◽  
Charge Loss
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