Comments on "Comparison of the neutron radiation tolerance of bipolar and junction field effect transistors"

G.C. Messenger; B. Buchanan; R. Dolan; S. Roosild

doi:10.1109/proc.1968.6549

Comments on "Comparison of the neutron radiation tolerance of bipolar and junction field effect transistors"

Proceedings of the IEEE ◽

10.1109/proc.1968.6549 ◽

1968 ◽

Vol 56 (7) ◽

pp. 1246-1246 ◽

Cited By ~ 2

Author(s):

G.C. Messenger ◽

B. Buchanan ◽

R. Dolan ◽

S. Roosild

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Neutron Radiation ◽

Radiation Tolerance ◽

Junction Field Effect Transistors

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Further comments on "Comparison of the neutron radiation tolerance of bipolar and junction field effect transistors"

Proceedings of the IEEE ◽

10.1109/proc.1969.6900 ◽

1969 ◽

Vol 57 (1) ◽

pp. 109-110 ◽

Cited By ~ 1

Author(s):

G.C. Messenger ◽

B. Buchanan ◽

R. Dolan ◽

S. Roosild

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Neutron Radiation ◽

Radiation Tolerance ◽

Junction Field Effect Transistors

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Comparison of the neutron radiation tolerance of bipolar and junction field effect transistors

Proceedings of the IEEE ◽

10.1109/proc.1967.6119 ◽

1967 ◽

Vol 55 (12) ◽

pp. 2188-2189 ◽

Cited By ~ 11

Author(s):

B. Buchanan ◽

R. Dolan ◽

S. Roosild

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Neutron Radiation ◽

Radiation Tolerance ◽

Junction Field Effect Transistors

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Optimization of the Neutron Radiation Tolerance of Junction Field Effect Transistors

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1969.4325508 ◽

1969 ◽

Vol 16 (6) ◽

pp. 81-86 ◽

Cited By ~ 4

Author(s):

William L. George

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Neutron Radiation ◽

Radiation Tolerance ◽

Junction Field Effect Transistors

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Neutron radiation effects in GaAs junction field effect transistors

IEEE Transactions on Nuclear Science ◽

10.1109/23.25484 ◽

1988 ◽

Vol 35 (6) ◽

pp. 1480-1486 ◽

Cited By ~ 4

Author(s):

B.K. Janousek ◽

W.E. Yamada ◽

W.L. Bloss

Keyword(s):

Field Effect ◽

Radiation Effects ◽

Field Effect Transistors ◽

Neutron Radiation ◽

Neutron Radiation Effects ◽

Junction Field Effect Transistors

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Neutron Radiation Effects in Junction Field-Effect Transistors

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1971.4326390 ◽

1971 ◽

Vol 18 (5) ◽

pp. 9-17 ◽

Cited By ~ 11

Author(s):

S. S. Naik ◽

W. G. Oldham

Keyword(s):

Field Effect ◽

Radiation Effects ◽

Field Effect Transistors ◽

Neutron Radiation ◽

Neutron Radiation Effects ◽

Junction Field Effect Transistors

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GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3010183 ◽

2020 ◽

Vol 67 (10) ◽

pp. 3972-3977 ◽

Cited By ~ 1

Author(s):

Chen Yang ◽

Houqiang Fu ◽

Viswanathan Naveen Kumar ◽

Kai Fu ◽

Hanxiao Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Vertical Channel ◽

Junction Field Effect Transistors

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Low Noise Junction Field Effect Transistors in a Silicon Radiation Detector Technology

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2006.882606 ◽

2006 ◽

Vol 53 (5) ◽

pp. 3004-3012 ◽

Cited By ~ 5

Author(s):

G.-F. Dalla Betta ◽

M. Boscardin ◽

F. Fenotti ◽

L. Pancheri ◽

C. Piemonte ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Radiation Detector ◽

Low Noise ◽

Detector Technology ◽

Junction Field Effect Transistors

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G-R noise and microscopic defects in irradiated junction field effect transistors

Solid-State Electronics ◽

10.1016/0038-1101(77)90011-9 ◽

1977 ◽

Vol 20 (11) ◽

pp. 897-906 ◽

Cited By ~ 3

Author(s):

I.N. Krishnan ◽

T.M. Chen

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Junction Field Effect Transistors

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Ion implantation for junction field effect transistors compatible with integrated circuits

10.1109/iedm.1970.188331 ◽

1970 ◽

Author(s):

L.G. McAfee ◽

K.R. Gardner ◽

A.U. Mac Rae

Keyword(s):

Integrated Circuits ◽

Ion Implantation ◽

Field Effect ◽

Field Effect Transistors ◽

Junction Field Effect Transistors

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High Noise Margin, Digital Logic Design Using Josephson Junction Field-Effect Transistors for Cryogenic Computing

IEEE Transactions on Applied Superconductivity ◽

10.1109/tasc.2021.3054347 ◽

2021 ◽

Vol 31 (5) ◽

pp. 1-5

Author(s):

Siddhartha Raman Sundara Raman ◽

Feng Wen ◽

Ravi Pillarisetty ◽

Vivek De ◽

Jaydeep P. Kulkarni

Keyword(s):

Josephson Junction ◽

Field Effect ◽

Field Effect Transistors ◽

Digital Logic ◽

Logic Design ◽

High Noise ◽

Noise Margin ◽

Junction Field Effect Transistors

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