Effects of electron irradiation of metal-nitride-semiconductor insulated gate field-effect transistors

A.G. Stanley; H.A.R. Wegener

doi:10.1109/proc.1966.4848

Effects of electron irradiation of metal-nitride-semiconductor insulated gate field-effect transistors

Proceedings of the IEEE ◽

10.1109/proc.1966.4848 ◽

1966 ◽

Vol 54 (5) ◽

pp. 784-785 ◽

Cited By ~ 8

Author(s):

A.G. Stanley ◽

H.A.R. Wegener

Keyword(s):

Electron Irradiation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Nitride ◽

Nitride Semiconductor

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Comparison of MOS and Metal-Nitride-Semiconductor Insulated Gate Field-Effect Transistors under Electron Irradiation

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1996.4324368 ◽

1966 ◽

Vol 13 (6) ◽

pp. 248-254 ◽

Cited By ~ 17

Author(s):

Alan G. Stanley

Keyword(s):

Electron Irradiation ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Nitride ◽

Nitride Semiconductor

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Polarization effects in nitride semiconductor device structures and performance of modulation doped field effect transistors

Solid-State Electronics ◽

10.1016/s0038-1101(99)00146-x ◽

1999 ◽

Vol 43 (10) ◽

pp. 1909-1927 ◽

Cited By ~ 86

Author(s):

Hadis Morkoç ◽

Roberto Cingolani ◽

Bernard Gil

Keyword(s):

Field Effect ◽

Semiconductor Device ◽

Field Effect Transistors ◽

Polarization Effects ◽

Device Structures ◽

Nitride Semiconductor ◽

And Performance

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Electron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors

Micro & Nano Letters ◽

10.1049/mnl.2011.0229 ◽

2011 ◽

Vol 6 (6) ◽

pp. 437 ◽

Cited By ~ 3

Author(s):

Qi Zhang ◽

Junjie Qi ◽

Yunhua Huang ◽

Xin Li ◽

Yue Zhang

Keyword(s):

Electron Irradiation ◽

Field Effect ◽

Field Effect Transistors ◽

Zno Nanowires ◽

Irradiation Effect

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Mechanism of increase in charge-pumping current of metal-nitride-oxide-silicon-field effect transistors during thick dielectric film etching using fluorocarbon gas plasma

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3456177 ◽

2010 ◽

Vol 28 (4) ◽

pp. 829-833 ◽

Cited By ~ 3

Author(s):

Yoshinari Ichihashi ◽

Yasushi Ishikawa ◽

Ryu Shimizu ◽

Seiji Samukawa

Keyword(s):

Field Effect ◽

Dielectric Film ◽

Field Effect Transistors ◽

Metal Nitride ◽

Charge Pumping ◽

Gas Plasma ◽

Nitride Oxide

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Electrical characterization of the metal ferroelectric oxide semiconductor and metal ferroelectric nitride semiconductor gate stacks for ferroelectric field effect transistors

Applied Physics Letters ◽

10.1063/1.4866655 ◽

2014 ◽

Vol 104 (9) ◽

pp. 092907 ◽

Cited By ~ 10

Author(s):

Ram Mohan Verma ◽

Ashwath Rao ◽

B. R. Singh

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Electrical Characterization ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Nitride Semiconductor ◽

Ferroelectric Oxide

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Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field-Effect Transistors

The Journal of Physical Chemistry C ◽

10.1021/acs.jpcc.8b09089 ◽

2018 ◽

Vol 123 (2) ◽

pp. 1454-1461 ◽

Cited By ~ 24

Author(s):

Filippo Giubileo ◽

Laura Iemmo ◽

Maurizio Passacantando ◽

Francesca Urban ◽

Giuseppe Luongo ◽

...

Keyword(s):

Field Emission ◽

Electron Irradiation ◽

Field Effect ◽

Field Effect Transistors ◽

Emission Properties ◽

Field Emission Properties

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Electron Irradiation of Metal Contacts in Monolayer MoS2 Field-Effect Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.0c11933 ◽

2020 ◽

Vol 12 (36) ◽

pp. 40532-40540 ◽

Cited By ~ 6

Author(s):

Aniello Pelella ◽

Osamah Kharsah ◽

Alessandro Grillo ◽

Francesca Urban ◽

Maurizio Passacantando ◽

...

Keyword(s):

Electron Irradiation ◽

Field Effect ◽

Field Effect Transistors ◽

Monolayer Mos2 ◽

Metal Contacts

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Effect of Electron Irradiation on Carrier Mobilities in Inversion Layers of Insulated Gate Field Effect Transistors

IEEE Transactions on Nuclear Science ◽

10.1109/tns.1967.4324806 ◽

1967 ◽

Vol 14 (6) ◽

pp. 266-275 ◽

Cited By ~ 9

Author(s):

Alan G. Stanley

Keyword(s):

Electron Irradiation ◽

Field Effect ◽

Field Effect Transistors

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IEEE Standard Definitions, Symbols, and Characterization of Metal-Nitride-Oxide Field-Effect Transistors

10.1109/ieeestd.1978.81706 ◽

1976 ◽

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Nitride ◽

Ieee Standard ◽

Nitride Oxide

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Metal-nitride-oxide-silicon field-effect transistors, with self-aligned gates

Solid-State Electronics ◽

10.1016/0038-1101(68)90067-1 ◽

1968 ◽

Vol 11 (7) ◽

pp. 653-660 ◽

Cited By ~ 38

Author(s):

J.C. Sarace ◽

R.E. Kerwin ◽

D.L. Klein ◽

R. Edwards

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Metal Nitride ◽

Nitride Oxide

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