scholarly journals Electron Irradiation of Metal Contacts in Monolayer MoS2 Field-Effect Transistors

2020 ◽  
Vol 12 (36) ◽  
pp. 40532-40540 ◽  
Author(s):  
Aniello Pelella ◽  
Osamah Kharsah ◽  
Alessandro Grillo ◽  
Francesca Urban ◽  
Maurizio Passacantando ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monolayer Mos2 ◽  
Metal Contacts

Electron irradiation effect on the Schottky gate of ZnO nanowires-based field effect transistors

2011 ◽  
Vol 6 (6) ◽  
pp. 437 ◽  
Author(s):  
Qi Zhang ◽  
Junjie Qi ◽  
Yunhua Huang ◽  
Xin Li ◽  
Yue Zhang
Keyword(s):  
Electron Irradiation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowires ◽  
Irradiation Effect

Benchmarking electrolyte gated monolayer MoS2 field effect transistors in aqueous environments

2021 ◽  
Author(s):  
Steffen Rühl ◽  
Max Heyl ◽  
Fabian Gärisch ◽  
Sylke Blumstengel ◽  
Giovanni Ligorio ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Monolayer Mos2 ◽  
Aqueous Environments

scholarly journals High performance ZnO nanowire field effect transistors with organic gate nanodielectrics: effects of metal contacts and ozone treatment

2007 ◽  
Vol 18 (15) ◽  
pp. 155201 ◽  
Author(s):  
Sanghyun Ju ◽  
Kangho Lee ◽  
Myung-Han Yoon ◽  
Antonio Facchetti ◽  
Tobin J Marks ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Ozone Treatment ◽  
Metal Contacts ◽  
Zno Nanowire

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

Direct observation of the hysteretic Fermi level modulation in monolayer MoS2 field effect transistors

2020 ◽  
Vol 20 (2) ◽  
pp. 298-303
Author(s):  
Yuhang Wang ◽  
Dongyong Li ◽  
Xubo Lai ◽  
Boyang Liu ◽  
Yibao Chen ◽  
...  
Keyword(s):  
Fermi Level ◽  
Direct Observation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Monolayer Mos2
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