Mechanism of charging damage during interlevel oxide deposition in high-density plasma tools

2002 ◽  
Author(s):  
G.S. Hwang ◽  
K.P. Giapis
Keyword(s):  
High Density ◽  
Oxide Deposition ◽  
Density Plasma

Analysis of gate oxide damage by ultraviolet light during oxide deposition in high density plasma

2011 ◽  
Vol 519 (20) ◽  
pp. 6645-6648 ◽  
Author(s):  
Dong Kwon Kim ◽  
JeongYun Lee ◽  
Dong-Hwan Kim ◽  
Kyoungsub Shin ◽  
Myeong-Cheol Kim ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Gate Oxide ◽  
High Density ◽  
Oxide Deposition ◽  
Density Plasma ◽  
Oxide Damage

Sub-20nm Device Voltage-Sensitive SRAM Characterization and Failure Analysis

2018 ◽  
Author(s):  
Seng Nguon Ting ◽  
Hsien-Ching Lo ◽  
Donald Nedeau ◽  
Aaron Sinnott ◽  
Felix Beaudoin
Keyword(s):  
Failure Analysis ◽  
High Performance ◽  
Yield Loss ◽  
Technology Development ◽  
High Density ◽  
High K ◽  
Yield Learning ◽  
Oxide Deposition ◽  
Edge Profile ◽  
High K Dielectric

Abstract With rapid scaling of semiconductor devices, new and more complicated challenges emerge as technology development progresses. In SRAM yield learning vehicles, it is becoming increasingly difficult to differentiate the voltage-sensitive SRAM yield loss from the expected hard bit-cells failures. It can only be accomplished by extensively leveraging yield, layout analysis and fault localization in sub-micron devices. In this paper, we describe the successful debugging of the yield gap observed between the High Density and the High Performance bit-cells. The SRAM yield loss is observed to be strongly modulated by different active sizing between two pull up (PU) bit-cells. Failure analysis focused at the weak point vicinity successfully identified abnormal poly edge profile with systematic High k Dielectric shorts. Tight active space on High Density cells led to limitation of complete trench gap-fill creating void filled with gate material. Thanks to this knowledge, the process was optimized with “Skip Active Atomic Level Oxide Deposition” step improving trench gap-fill margin.

Control of high-density plasma sources for CVD and etching

Vacuum ◽  
1997 ◽  
Vol 48 (7-9) ◽  
pp. 659-664 ◽  
Author(s):  
K Suzuki ◽  
H Sugai ◽  
K Nakamura ◽  
TH Ahn ◽  
M Nagatsu
Keyword(s):  
High Density ◽  
Plasma Sources ◽  
Density Plasma

scholarly journals Studies on laser-driven generation of fast high-density plasma blocks for fast ignition

2006 ◽  
Vol 24 (2) ◽  
pp. 249-254 ◽  
Author(s):  
J. BADZIAK ◽  
S. GŁOWACZ ◽  
H. HORA ◽  
S. JABŁOŃSKI ◽  
J. WOŁOWSKI
Keyword(s):  
Proton Beam ◽  
Laser Energy ◽  
Skin Layer ◽  
Fast Ignition ◽  
High Density ◽  
Proton Density ◽  
Fast Ignitor ◽  
Ignition Threshold ◽  
Density Plasma

The properties of plasma (proton) block driven by the laser-induced skin-layer ponderomotive acceleration (S-LPA) mechanism are discussed. It is shown that the proton density of the plasma block is about a thousand times higher than that of the proton beam produced by the target normal sheath acceleration (TNSA) mechanism. Such a high-density plasma (proton) block can be considered as a fast ignitor of fusion targets. The estimates show that using the S-LPA driven plasma block, the ignition threshold for precompressed DT fuel can be reached at the ps laser energy ≤ 100 kJ.

Characterization of the CH4/H2/Ar high density plasma etching process for HgCdTe

1999 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
C. R. Eddy ◽  
D. Leonhardt ◽  
V. A. Shamamian ◽  
J. R. Meyer ◽  
C. A. Hoffman ◽  
...  
Keyword(s):  
Plasma Etching ◽  
High Density ◽  
Etching Process ◽  
Plasma Etching Process ◽  
Density Plasma
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