Laser enhanced diffusion of nitrogen in high purity semi-insulating 4H silicon carbide substrates for non-rectifying contact formation to photoconductive semiconductor switches

Author(s):  
W. Sullivan ◽  
C. Hettler ◽  
J. Dickens
2018 ◽  
Vol 185 ◽  
pp. 04007 ◽  
Author(s):  
A.N. Taldenkov ◽  
A.V. Inyushkin ◽  
E.A. Chistotina ◽  
V.G. Ralchenko ◽  
A.P. Bolshakov ◽  
...  

The magnetic properties of single crystals of synthetic diamond and crystals of silicon carbide were studied. High-purity samples of diamonds synthesized with HPHT and CVD technologies were used. The crystals of silicon carbide were grown by sublimation and industrial technology. Along with samples with a natural isotopic composition, monoisotopic crystals of diamond (99.96% 12C and 99.96% 13C) and silicon carbide (99.993% of 28Si) were studied. On the basis of the data obtained, the diamagnetic susceptibility was determined and the concentration of paramagnetic centers and the content of the ferromagnetic component were evaluated. The results are discussed.


2006 ◽  
Vol 54 (16) ◽  
pp. 4273-4283 ◽  
Author(s):  
Z. Tian ◽  
N.R. Quick ◽  
A. Kar

1990 ◽  
Vol 39 (6) ◽  
pp. T83-T87 ◽  
Author(s):  
Hiroyasu YOSHIKAWA ◽  
Youichi ISHIBASHI ◽  
Naoki GUNJI ◽  
Kouichi SASAYAMA ◽  
Takeshi MISUMI

2020 ◽  
Vol 10 (18) ◽  
pp. 6161
Author(s):  
Kyoung-Jin Lee ◽  
Yanggu Kang ◽  
Young Hun Kim ◽  
Se Won Baek ◽  
Haejin Hwang

β-silicon carbide (SiC) powders were synthesized by the carbothermal reduction of methyl-modified silica aerogel/carbon mixtures. The correlations between the phase evolution and morphologies of the SiC powders and the C/SiO2 ratio were investigated. At a C/SiO2 ratio of 3, β-SiC formed at 1425 °C and single-phase SiC powders were obtained at 1525 °C. The methyl groups (-CH3) on the silica aerogel surfaces played important roles in the formation of SiC during the carbothermal reduction. SiC could be synthesized from the silica aerogel/carbon mixtures under lower temperature and C/SiO2 ratios than those needed for quartz or hydrophilic silica. The morphology of the SiC powder depended on the C/SiO2 ratio. A low C/SiO2 ratio resulted in β-SiC powder with spherical morphology, while agglomerates consisting of fine SiC particles were obtained at the C/SiO2 ratio of 3. High-purity SiC powder (99.95%) could be obtained with C/SiO2 = 0.5 and 3 at 1525 °C for 5 h.


2019 ◽  
Vol 238 ◽  
pp. 117875 ◽  
Author(s):  
Kaidi Sun ◽  
Tongtong Wang ◽  
Zhe Chen ◽  
Wenyang Lu ◽  
Xin He ◽  
...  

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