Evaluation of Trace Impurities in the Preparation of High-Purity Silicon Carbide

1966 ◽  
Vol 113 (11) ◽  
pp. 1215 ◽  
Author(s):  
D. L. Barrett
Keyword(s):  
Silicon Carbide ◽  
High Purity ◽  
Trace Impurities ◽  
High Purity Silicon

Direct determination of trace impurities in high-purity silicon nitride by axial viewed inductively coupled plasma optical emission spectrometry using a slurry nebulization technique

2015 ◽  
Vol 30 (4) ◽  
pp. 909-915 ◽  
Author(s):  
Zheng Wang ◽  
Junye Zhang ◽  
Guoxia Zhang ◽  
Deren Qiu ◽  
Pengyuan Yang
Keyword(s):  
Silicon Nitride ◽  
High Purity ◽  
Inductively Coupled Plasma ◽  
Direct Determination ◽  
Optical Emission ◽  
Emission Spectrometry ◽  
Trace Impurities ◽  
High Purity Silicon ◽  
Slurry Nebulization

A simple, rapid and reliable method was developed for the determination of trace impurities in high-purity silicon nitride (nm- and μm-sized) by ICP-OES using a slurry nebulization technique.

scholarly journals 3D printing of high‐purity silicon carbide

2019 ◽  
Vol 103 (3) ◽  
pp. 1575-1581 ◽  
Author(s):  
Kurt Terrani ◽  
Brian Jolly ◽  
Michael Trammell
Keyword(s):  
Silicon Carbide ◽  
3D Printing ◽  
High Purity ◽  
High Purity Silicon

Low Temperature Direct Reactions Between Elemental Silicon and Liquid Ammonia or Amines for Ceramics and Chemical Intermediates

1988 ◽  
Vol 121 ◽  
Author(s):  
Eloise A. Pugar ◽  
Peter E.D. Morgan
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Low Temperature ◽  
High Purity ◽  
Liquid Ammonia ◽  
Product Formation ◽  
Elemental Silicon ◽  
High Purity Silicon ◽  
Direct Reactions ◽  
Uv Raman

ABSTRACTDirect processes that may be used to manufacture high purity silicon nitride or silicon carbide are described. Elemental silicon has been found to react directly with liquid ammonia and amines at low temperature to yield compounds for both the ceramic and chemical industries. Silicon-amine direct reactions, previously thought not to occur, were investigated by using 29Si NMR, IR, UV, Raman, XRD, ICP, EDS and TGA methods to detect and characterize product formation. The [Si,N,H] and [Si,C,N,H] products transform to silicon nitride or silicon carbide respectively when heated above 1300°C.

Passive-Oxidation Kinetics of High-Purity Silicon Carbide from 800o to 1100oC

1996 ◽  
Vol 79 (11) ◽  
pp. 2897-2911 ◽  
Author(s):  
C. Eric Ramberg ◽  
Gary Cruciani ◽  
Karl E. Spear ◽  
Richard E. Tressler ◽  
Charles F. Ramberg
Keyword(s):  
Silicon Carbide ◽  
High Purity ◽  
Oxidation Kinetics ◽  
Passive Oxidation ◽  
High Purity Silicon ◽  
Kinetics Of

Spectrographic Analysis of High Purity Silicon Carbide

1960 ◽  
Vol 32 (8) ◽  
pp. 933-935 ◽  
Author(s):  
G. H. Morrison ◽  
R. L. Rupp ◽  
G. L. Klecak
Keyword(s):  
Silicon Carbide ◽  
High Purity ◽  
Spectrographic Analysis ◽  
High Purity Silicon
Sign in / Sign up

Export Citation Format

Share Document