scholarly journals High power tests of normal conducting single-cell structures

2007 ◽  
Author(s):  
V.A. Dolgashev ◽  
S.G. Tantawi ◽  
C.D. Nantista ◽  
Y. Higashi ◽  
T. Higo
Keyword(s):  
Single Cell ◽  
High Power ◽  
Cell Structures

Single cell Thermionic Fuel Element Test Rig high power operations and system upgrades

1995 ◽  
Author(s):  
Nick J. Roh ◽  
Dan Bruns ◽  
Carl F. Frisch ◽  
Victor N. Androsov ◽  
John C. Logothetis ◽  
...  
Keyword(s):  
Fuel Element ◽  
Single Cell ◽  
High Power ◽  
Test Rig ◽  
Power Operations ◽  
System Upgrades

High power RF tests of 433 MHz single-cell accelerator cavities and associated feed system

2003 ◽  
Author(s):  
A.M. Vetter ◽  
J.L. Adamski ◽  
R.W. Kruse ◽  
A.G. Krycuk
Keyword(s):  
Single Cell ◽  
High Power ◽  
Feed System

scholarly journals RF Breakdown in Normal Conducting Single-Cell Structures

2006 ◽  
Author(s):  
V.A. Dolgashev ◽  
S.G. Tantawi ◽  
C.D. Nantista ◽  
Y. Higashi ◽  
T. Higo
Keyword(s):  
Single Cell ◽  
Cell Structures ◽  
Rf Breakdown

Installation of new damped cavities at the Photon Factory storage ring

1998 ◽  
Vol 5 (3) ◽  
pp. 369-371 ◽  
Author(s):  
Masaaki Izawa ◽  
Tadashi Koseki ◽  
Shyogo Sakanaka ◽  
Takeshi Takahashi ◽  
Klaus Hass ◽  
...  
Keyword(s):  
Single Cell ◽  
Storage Ring ◽  
High Power ◽  
Simple Structure ◽  
Power Input ◽  
Higher Order ◽  
Microwave Absorber ◽  
Photon Factory ◽  
Higher Order Modes ◽  
Cell Cavity

New damped cavities have been installed in the Photon Factory (PF) storage ring and successfully operated in the last scheduled user run of 1996. The new damped cavity is a simple single-cell cavity with somewhat large beam-duct holes. The part of the beam duct that is attached to the cavity is made of SiC, which works as a microwave absorber and damps the higher-order modes excited in the cavity. Because of its simple structure, the operation of the cavity is very stable and also a high power input of more than 150 kW is possible. No coupled-bunch instabilities due to the new cavity were observed during operation.

scholarly journals Chrysosphaera sieminskae species nova, a new Chrysosphaera species from Poland

2014 ◽  
Vol 63 (1) ◽  
pp. 97-99
Author(s):  
Jan Matuła
Keyword(s):  
New Species ◽  
Single Cell ◽  
Water Bodies ◽  
Animal Host ◽  
Poor Fen ◽  
Cell Structures ◽  
A New Species ◽  
Shape And Size

A new species of <i>Chrysosphaera</i> - <i>Ch. sieminskae</i> has been found in Poland. It is an alga forming compact colonies consisting of single cell structures settled down at <i>Testacea's</i> transluscent carapace (e.g. <i>Euglypha</i>, <i>Centropyxis</i>, <i>Difflugia</i>). The new species, which grows on specific animal host and is characterized by a peculiar organization of colonies, differs in shape and size of its cells from all other taxons belonging to the same genus. This new species has been found in the conditions of poor fen habitats, in water bodies at pH from 3.9 to 5.0.

High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 1231-1234
Author(s):  
Andrey O. Konstantinov ◽  
J.O. Svedberg ◽  
I.C. Ray ◽  
Chris I. Harris ◽  
Christer Hallin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Cell ◽  
High Power ◽  
High Efficiency ◽  
Large Area ◽  
Short Channel ◽  
Novel Structure ◽  
Channel Effects ◽  
Cell Components ◽  
Lateral Epitaxy

High power high efficiency silicon carbide RF MESFETs are fabricated using a novel structure utilizing lateral epitaxy. The MESFET employs buried p-type depletion stoppers grown by lateral epitaxy with subsequent planarization. The depletion stopper is epitaxially overgrown by the channel layer. The depletion stopper suppresses short channel effects and increases the operation voltage and the RF signal gain at high voltage operation. High breakdown voltages of over 200 Volts are achieved for single-cell components, however large-area transistors are limited to around 150 Volts. Single-cell components measured on-wafer demonstrate an Ft of 10 GHz and high unilateral gain. Packaged 6-mm RF transistors in amplifier circuits feature a saturated power of 20 W and a P1dB of 15W with a linear gain of over 16 dB at Vdd of 60 V for 2.25 GHz operation. Maximum drain efficiency is 56% for class AB operation, 48% at 1 dB compression point and 72% for class C at 2.25 GHz.

Video-Enhanced Microscopy--Better Visibility of Plant Cell Structures

1982 ◽  
Vol 40 ◽  
pp. 182-185
Author(s):  
N.S. Allen ◽  
R.D. Allen
Keyword(s):  
Diffraction Pattern ◽  
Theoretical Basis ◽  
Numerical Aperture ◽  
Gain Control ◽  
Control Unit ◽  
Camera Control ◽  
Variable Gain ◽  
Contrast Method ◽  
Fine Detail ◽  
Cell Structures

Various methods of video-enhanced microscopy combine TV cameras with light microscopes creating images with improved resolution, contrast and visibility of fine detail, which can be recorded rapidly and relatively inexpensively. The AVEC (Allen Video-enhanced Contrast) method avoids polarizing rectifiers, since the microscope is operated at retardations of λ/9- λ/4, where no anomaly is seen in the Airy diffraction pattern. The iris diaphram is opened fully to match the numerical aperture of the condenser to that of the objective. Under these conditions, no image can be realized either by eye or photographically. Yet the image becomes visible using the Hamamatsu C-1000-01 binary camera, if the camera control unit is equipped with variable gain control and an offset knob (which sets a clamp voltage of a D.C. restoration circuit). The theoretical basis for these improvements has been described.

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