High power RF tests of 433 MHz single-cell accelerator cavities and associated feed system

2003 ◽  
Author(s):  
A.M. Vetter ◽  
J.L. Adamski ◽  
R.W. Kruse ◽  
A.G. Krycuk
Keyword(s):  
Single Cell ◽  
High Power ◽  
Feed System

Single cell Thermionic Fuel Element Test Rig high power operations and system upgrades

1995 ◽  
Author(s):  
Nick J. Roh ◽  
Dan Bruns ◽  
Carl F. Frisch ◽  
Victor N. Androsov ◽  
John C. Logothetis ◽  
...  
Keyword(s):  
Fuel Element ◽  
Single Cell ◽  
High Power ◽  
Test Rig ◽  
Power Operations ◽  
System Upgrades

Installation of new damped cavities at the Photon Factory storage ring

1998 ◽  
Vol 5 (3) ◽  
pp. 369-371 ◽  
Author(s):  
Masaaki Izawa ◽  
Tadashi Koseki ◽  
Shyogo Sakanaka ◽  
Takeshi Takahashi ◽  
Klaus Hass ◽  
...  
Keyword(s):  
Single Cell ◽  
Storage Ring ◽  
High Power ◽  
Simple Structure ◽  
Power Input ◽  
Higher Order ◽  
Microwave Absorber ◽  
Photon Factory ◽  
Higher Order Modes ◽  
Cell Cavity

New damped cavities have been installed in the Photon Factory (PF) storage ring and successfully operated in the last scheduled user run of 1996. The new damped cavity is a simple single-cell cavity with somewhat large beam-duct holes. The part of the beam duct that is attached to the cavity is made of SiC, which works as a microwave absorber and damps the higher-order modes excited in the cavity. Because of its simple structure, the operation of the cavity is very stable and also a high power input of more than 150 kW is possible. No coupled-bunch instabilities due to the new cavity were observed during operation.

scholarly journals High power tests of normal conducting single-cell structures

2007 ◽  
Author(s):  
V.A. Dolgashev ◽  
S.G. Tantawi ◽  
C.D. Nantista ◽  
Y. Higashi ◽  
T. Higo
Keyword(s):  
Single Cell ◽  
High Power ◽  
Cell Structures

High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 1231-1234
Author(s):  
Andrey O. Konstantinov ◽  
J.O. Svedberg ◽  
I.C. Ray ◽  
Chris I. Harris ◽  
Christer Hallin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Cell ◽  
High Power ◽  
High Efficiency ◽  
Large Area ◽  
Short Channel ◽  
Novel Structure ◽  
Channel Effects ◽  
Cell Components ◽  
Lateral Epitaxy

High power high efficiency silicon carbide RF MESFETs are fabricated using a novel structure utilizing lateral epitaxy. The MESFET employs buried p-type depletion stoppers grown by lateral epitaxy with subsequent planarization. The depletion stopper is epitaxially overgrown by the channel layer. The depletion stopper suppresses short channel effects and increases the operation voltage and the RF signal gain at high voltage operation. High breakdown voltages of over 200 Volts are achieved for single-cell components, however large-area transistors are limited to around 150 Volts. Single-cell components measured on-wafer demonstrate an Ft of 10 GHz and high unilateral gain. Packaged 6-mm RF transistors in amplifier circuits feature a saturated power of 20 W and a P1dB of 15W with a linear gain of over 16 dB at Vdd of 60 V for 2.25 GHz operation. Maximum drain efficiency is 56% for class AB operation, 48% at 1 dB compression point and 72% for class C at 2.25 GHz.

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