High-power tests of a single-cell copper accelerating cavity driven by two input couplers

Author(s):  
D. Horan ◽  
D. Bromberek ◽  
D. Meyer ◽  
G. Waldschmidt
Keyword(s):  
1995 ◽  
Author(s):  
Nick J. Roh ◽  
Dan Bruns ◽  
Carl F. Frisch ◽  
Victor N. Androsov ◽  
John C. Logothetis ◽  
...  

Author(s):  
A.M. Vetter ◽  
J.L. Adamski ◽  
R.W. Kruse ◽  
A.G. Krycuk
Keyword(s):  

1998 ◽  
Vol 5 (3) ◽  
pp. 369-371 ◽  
Author(s):  
Masaaki Izawa ◽  
Tadashi Koseki ◽  
Shyogo Sakanaka ◽  
Takeshi Takahashi ◽  
Klaus Hass ◽  
...  

New damped cavities have been installed in the Photon Factory (PF) storage ring and successfully operated in the last scheduled user run of 1996. The new damped cavity is a simple single-cell cavity with somewhat large beam-duct holes. The part of the beam duct that is attached to the cavity is made of SiC, which works as a microwave absorber and damps the higher-order modes excited in the cavity. Because of its simple structure, the operation of the cavity is very stable and also a high power input of more than 150 kW is possible. No coupled-bunch instabilities due to the new cavity were observed during operation.


Author(s):  
V.A. Dolgashev ◽  
S.G. Tantawi ◽  
C.D. Nantista ◽  
Y. Higashi ◽  
T. Higo

2006 ◽  
Vol 527-529 ◽  
pp. 1231-1234
Author(s):  
Andrey O. Konstantinov ◽  
J.O. Svedberg ◽  
I.C. Ray ◽  
Chris I. Harris ◽  
Christer Hallin ◽  
...  

High power high efficiency silicon carbide RF MESFETs are fabricated using a novel structure utilizing lateral epitaxy. The MESFET employs buried p-type depletion stoppers grown by lateral epitaxy with subsequent planarization. The depletion stopper is epitaxially overgrown by the channel layer. The depletion stopper suppresses short channel effects and increases the operation voltage and the RF signal gain at high voltage operation. High breakdown voltages of over 200 Volts are achieved for single-cell components, however large-area transistors are limited to around 150 Volts. Single-cell components measured on-wafer demonstrate an Ft of 10 GHz and high unilateral gain. Packaged 6-mm RF transistors in amplifier circuits feature a saturated power of 20 W and a P1dB of 15W with a linear gain of over 16 dB at Vdd of 60 V for 2.25 GHz operation. Maximum drain efficiency is 56% for class AB operation, 48% at 1 dB compression point and 72% for class C at 2.25 GHz.


Author(s):  
Debby A. Jennings ◽  
Michael J. Morykwas ◽  
Louis C. Argenta

Grafts of cultured allogenic or autogenic keratlnocytes have proven to be an effective treatment of chronic wounds and burns. This study utilized a collagen substrate for keratinocyte and fibroblast attachment. The substrate provided mechanical stability and augmented graft manipulation onto the wound bed. Graft integrity was confirmed by light and transmission electron microscopy.Bovine Type I dermal collagen sheets (100 μm thick) were crosslinked with 254 nm UV light (13.5 Joules/cm2) to improve mechanical properties and reduce degradation. A single cell suspension of third passage neonatal foreskin fibroblasts were plated onto the collagen. Five days later, a single cell suspension of first passage neonatal foreskin keratinocytes were plated on the opposite side of the collagen. The grafts were cultured for one month.The grafts were fixed in phosphate buffered 4% formaldehyde/1% glutaraldehyde for 24 hours. Graft pieces were then washed in 0.13 M phosphate buffer, post-fixed in 1% osmium tetroxide, dehydrated, and embedded in Polybed 812.


2005 ◽  
Vol 48 (2) ◽  
pp. 208-217 ◽  
Author(s):  
Matthew Watson ◽  
Carl Byington ◽  
Douglas Edwards ◽  
Sanket Amin

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