Short turn-on/off time linear voltage regulator with data detector for power-aware optical interconnect system

2012 ◽  
Author(s):  
Jamshid Sangirov ◽  
Ikechi Augustine Ukaegbu ◽  
Tae-Woo Lee ◽  
Mu-Hee Cho ◽  
Hyo-Hoon Park
Keyword(s):  
Optical Interconnect ◽  
Voltage Regulator ◽  
Turn On ◽  
Interconnect System ◽  
Off Time ◽  
Time Linear ◽  
Linear Voltage

A CMOS SiC Linear Voltage Regulator for High Temperature Applications

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000106-000111 ◽  
Author(s):  
R.C. Murphree ◽  
S. Ahmed ◽  
M. Barlow ◽  
A. Rahman ◽  
H.A. Mantooth ◽  
...  
Keyword(s):  
Feedback Loop ◽  
Input Voltage ◽  
Voltage Regulator ◽  
Voltage Reference ◽  
Frequency Compensation ◽  
Error Amplifier ◽  
Linear Regulator ◽  
Load Regulation ◽  
Pass Transistor ◽  
Linear Voltage

Abstract This paper establishes the first linear regulator in a 1.2 μm CMOS silicon carbide (SiC) process. The linear regulator presented consists of a SiC error amplifier and a pass transistor which has a W/L = 70,000 μm / 1.2 μm. The feedback loop is internal and the frequency compensation network is a combination of internal and external components. As a result of potential process variation in this emerging technology, the voltage reference used at the negative input terminal of the error amplifier has been made external. With an input voltage of 20 V to 30 V, the voltage regulator is able to provide a 15 V output and a continuous load current of 100 mA at temperatures ranging from 25 °C to over 400 °C. At a temperature of 400 °C, testing of the fabricated circuit has shown line regulation of less than 4 mV/V. Under the same test conditions, a load regulation of less than 420 mV/A is achieved.

A High Precision IGBT Macro-Model for Switching Simulations

2016 ◽  
Vol 698 ◽  
pp. 109-117
Author(s):  
Masaki Kazumi ◽  
Hitoshi Aoki ◽  
Yukiko Arai ◽  
Shunichiro Todoroki ◽  
Takuya Totsuka ◽  
...  
Keyword(s):  
High Power ◽  
Source Code ◽  
Small Signal ◽  
Electrical Circuits ◽  
Macro Model ◽  
Insulated Gate Bipolar Transistor ◽  
Turn On ◽  
Spice Model ◽  
Test Circuit ◽  
Off Time

In this research, a novel SPICE model of an Insulated-Gate-Bipolar-Transistor (IGBT), which is often used to handle high power signals in automotive electrical circuits, has been developed. The model consists of basic SPICE elements. Thus, it can be used in any SPICE-compatible simulators without any source code modification. This paper presents the results of DC, small signal AC, and transient characteristics considering the temperature dependence by using the proposed IGBT macro-model for SPICE. In addition, turn-on and -off time verifications are presented by using a switching test circuit provided by an IGBT manufacturer.

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