scholarly journals On the origin of bistable resistive switching in metal organic charge transfer complex memory cells

2007 ◽  
Vol 91 (8) ◽  
pp. 083506 ◽  
Author(s):  
T. Kever ◽  
U. Böttger ◽  
C. Schindler ◽  
R. Waser
2016 ◽  
Vol 4 (47) ◽  
pp. 11173-11179 ◽  
Author(s):  
Faegheh Hoshyargar ◽  
Mahnaz Shafiei ◽  
Carlo Piloto ◽  
Nunzio Motta ◽  
Anthony P. O'Mullane

The ability to detect and monitor toxic and greenhouse gases is highly important, however to achieve this at room temperature and allow for remote sensing applications is a significant challenge.


ChemPlusChem ◽  
2016 ◽  
Vol 81 (4) ◽  
pp. 378-383 ◽  
Author(s):  
Faegheh Hoshyargar ◽  
Manika Mahajan ◽  
Anuradha ◽  
Sheshanath V. Bhosale ◽  
Louis Kyratzis ◽  
...  

Nanoscale ◽  
2014 ◽  
Vol 6 (5) ◽  
pp. 2573-2576 ◽  
Author(s):  
Jingyi Song ◽  
Zhuoyu Ji ◽  
Qiong Nie ◽  
Wenping Hu

A facile and efficient way is demonstrated to tune the metal–organic nanostructures of Ni[TCNQ]2(H2O)2 and their patterns by water.


Author(s):  
Robert Müller ◽  
Olivier Rouault ◽  
Aaron Katzenmeyer ◽  
Ludovic Goux ◽  
Dirk J. Wouters ◽  
...  

Electrodeposition experiments of the charge-transfer complex copper tetracyanoquinodimethane (CuTCNQ) (where TCNQ denotes 7,7′,8,8′-tetracyanoquinodimethane) on noble metal electrodes (M=Pt and Au) were optimized in order to produce suitable layers for bipolar resistive switching cross-bar M/CuTCNQ/Al memory cells. Corresponding memories exhibited up to more than 10 000 consecutive write/erase cycles, with very stable on and off reading currents and an on/off current ratio of 10. CuTCNQ electrodeposition techniques were furthermore optimized for growing the material in 250 nm diameter contact holes of complementary metal oxide semiconductor dies with tungsten bottom contacts.


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