Fabrication of deep lateral single-crystal-silicon blaze micro-grating by Inductively-Coupled-Plasma Reactive Ion Etch

2012 ◽  
Author(s):  
Y. H. Lin ◽  
C. J. Weng ◽  
C. Y. Su ◽  
W. Hsu
Keyword(s):  
Single Crystal ◽  
Inductively Coupled Plasma ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Inductively Coupled

Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure, inductively coupled plasma

2003 ◽  
Vol 94 (3) ◽  
pp. 1969-1974 ◽  
Author(s):  
Ameya Bapat ◽  
Christopher R. Perrey ◽  
Steven A. Campbell ◽  
C. Barry Carter ◽  
Uwe Kortshagen
Keyword(s):  
Single Crystal ◽  
Inductively Coupled Plasma ◽  
Silicon Nanoparticles ◽  
Single Crystal Silicon ◽  
Low Pressure ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
Oriented Single Crystal

SCREAM for Multi-Level Movable Structures by Inductively Coupled Plasma Process

2002 ◽  
Author(s):  
Yu-Hsin Lin ◽  
Hung-Ling Yin ◽  
Yung-Yu Hsu ◽  
Yi-Chiuen Hu ◽  
Hsiao-Yu Chou ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Single Crystal Silicon ◽  
Fabrication Process ◽  
Experimental Investigations ◽  
Plasma Process ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
Silicon Structures ◽  
Multi Level ◽  
Fabrication Parameters

A novel fabrication process to etch, to passivate, and to release single-crystal silicon structures totally in just only one process by inductively coupled plasma reactive ion etching (ICP-RIE) has been presented in this paper. Several kinds of movable actuators such as relay, comb-drive, and capacitance with thickness of 30 μm have been fabricated successfully to demonstrate this fabrication process. Here, experimental investigations about fabrication parameters to get well profile and suspension structures are performed in a STS ICP-RIE system.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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