SCREAM for Multi-Level Movable Structures by Inductively Coupled Plasma Process

2002 ◽  
Author(s):  
Yu-Hsin Lin ◽  
Hung-Ling Yin ◽  
Yung-Yu Hsu ◽  
Yi-Chiuen Hu ◽  
Hsiao-Yu Chou ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Single Crystal Silicon ◽  
Fabrication Process ◽  
Experimental Investigations ◽  
Plasma Process ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
Silicon Structures ◽  
Multi Level ◽  
Fabrication Parameters

A novel fabrication process to etch, to passivate, and to release single-crystal silicon structures totally in just only one process by inductively coupled plasma reactive ion etching (ICP-RIE) has been presented in this paper. Several kinds of movable actuators such as relay, comb-drive, and capacitance with thickness of 30 μm have been fabricated successfully to demonstrate this fabrication process. Here, experimental investigations about fabrication parameters to get well profile and suspension structures are performed in a STS ICP-RIE system.

Synthesis of highly oriented, single-crystal silicon nanoparticles in a low-pressure, inductively coupled plasma

2003 ◽  
Vol 94 (3) ◽  
pp. 1969-1974 ◽  
Author(s):  
Ameya Bapat ◽  
Christopher R. Perrey ◽  
Steven A. Campbell ◽  
C. Barry Carter ◽  
Uwe Kortshagen
Keyword(s):  
Single Crystal ◽  
Inductively Coupled Plasma ◽  
Silicon Nanoparticles ◽  
Single Crystal Silicon ◽  
Low Pressure ◽  
Crystal Silicon ◽  
Inductively Coupled ◽  
Oriented Single Crystal

scholarly journals Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4267
Author(s):  
Stefano Ponzoni ◽  
Sonia Freddi ◽  
Marta Agati ◽  
Vincent Le Borgne ◽  
Simona Boninelli ◽  
...  
Keyword(s):  
Photon Energy ◽  
Silicon Nanowires ◽  
Inductively Coupled Plasma ◽  
Inner Core ◽  
Optical Measurements ◽  
Spectral Energy ◽  
Silicon Nanostructures ◽  
Relaxation Dynamics ◽  
Plasma Process ◽  
Inductively Coupled

To exploit the optoelectronic properties of silicon nanostructures (SiNS) in real devices, it is fundamental to study the ultrafast processes involving the photogenerated charges separation, migration and lifetime after the optical excitation. Ultrafast time-resolved optical measurements provide such information. In the present paper, we report on the relaxation dynamics of photogenerated charge-carriers in ultrafine SiNS synthesized by means of inductively-coupled-plasma process. The carriers’ transient regime was characterized in high fluence regime by using a tunable pump photon energy and a broadband probe pulse with a photon energy ranging from 1.2 eV to 2.8 eV while varying the energy of the pump photons and their polarization. The SiNS consist of Si nanospheres and nanowires (NW) with a crystalline core embedded in a SiOx outer-shell. The NW inner core presents different typologies: long silicon nanowires (SiNW) characterized by a continuous core (with diameters between 2 nm and 15 nm and up to a few microns long), NW with disconnected fragments of SiNW (each fragment with a length down to a few nanometers), NW with a “chaplet-like” core and NW with core consisting of disconnected spherical Si nanocrystals. Most of these SiNS are asymmetric in shape. Our results reveal a photoabsorption (PA) channel for pump and probe parallel polarizations with a maximum around 2.6 eV, which can be associated to non-isotropic ultra-small SiNS and ascribed either to (i) electron absorption driven by the probe from some intermediate mid-gap states toward some empty state above the bottom of the conduction band or (ii) the Drude-like free-carrier presence induced by the direct-gap transition in the their band structure. Moreover, we pointed up the existence of a broadband and long-living photobleaching (PB) in the 1.2–2.0 eV energy range with a maximum intensity around 1.35 eV which could be associated to some oxygen related defect states present at the Si/SiOx interface. On the other hand, this wide spectral energy PB can be also due to both silicon oxide band-tail recombination and small Si nanostructure excitonic transition.

scholarly journals Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

2020 ◽  
Author(s):  
Jing Ma ◽  
Yongqiang Zhao ◽  
Wen Liu ◽  
Fuhua Yang ◽  
Xiaodong Wang
Keyword(s):  
Inductively Coupled Plasma ◽  
Fabrication Process ◽  
Etching Process ◽  
Photon Absorption ◽  
Hydrophobic Property ◽  
Water Contact ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Fabrication And Characterization

Abstract GaAs nanostructures has attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate were rarely reported and most of the preparation processes are complex. Here, we reported a black GaAs fabrication process using a simple Inductively coupled plasma (ICP) etching process，with no extra lithography process. The fabricated sample has a low Reflectance value，close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle (CA) of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

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