Exciting Advances in Power Electronics: APEC 2018 Divulges Latest Advances in Magnetics, Wide-Bandgap Devices, Vehicle Batteries, 3-D Packaging, and More

2018 ◽  
Vol 5 (2) ◽  
pp. 49-55 ◽  
Author(s):  
Ashok Bindra ◽  
Tom Keim
Keyword(s):  
Power Electronics ◽  
Wide Bandgap

On the Progress Made in GaN Vertical Device Technology

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940010
Author(s):  
Dong Ji ◽  
Srabanti Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Wide Range ◽  
Higher Power ◽  
Key Driver ◽  
Bandgap Semiconductors ◽  
Device Technology ◽  
Made In

Silicon technology enabled most of the electronics we witness today, including power electronics. However, wide bandgap semiconductors are capable of addressing high-power electronics more efficiently compared to Silicon, where higher power density is a key driver. Among the wide bandgap semiconductors, silicon carbide (SiC) and gallium nitride (GaN) are in the forefront in power electronics. GaN is promising in its vertical device topology. From CAVETs to MOSFETs, GaN has addressed voltage requirements over a wide range. Our current research in GaN offers a promising view of GaN that forms the theme of this article. CAVETs and OGFETs (a type of MOSFET) in GaN are picked to sketch the key achievements made in GaN vertical device over the last decade.

Potential and Challenges of Diamond Wafer Toward Power Electronics

2018 ◽  
Vol 12 (2) ◽  
pp. 175-178
Author(s):  
Shinichi Shikata ◽  
Keyword(s):  
Energy Saving ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Power Device ◽  
Surface Finishing ◽  
Low Resistivity ◽  
Wide Bandgap Materials ◽  
Bandgap Semiconductors ◽  
Century Development ◽  
Device Technology

To achieve a 50% worldwide reduction of CO2by the middle of this century, development of energy saving power device technology using wide bandgap materials is urgently needed. Diamond is receiving increasing attention as a next generation material for wide bandgap semiconductors owing to its extreme characteristics. Research studies investigating large wafers, low resistivity, and low dislocation have accelerated. This study targets the use of wafers for power electronics applications, and the required machining technologies for diamond, including wafer shaping, slicing, and surface finishing, are introduced.

Wide Bandgap Semiconductor Opportunities in Power Electronics

2018 ◽  
Author(s):  
Sujit Das ◽  
Laura D. Marlino ◽  
Kristina O. Armstrong
Keyword(s):  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

scholarly journals Soft magnetic materials for a sustainable and electrified world

Science ◽  
2018 ◽  
Vol 362 (6413) ◽  
pp. eaao0195 ◽  
Author(s):  
Josefina M. Silveyra ◽  
Enzo Ferrara ◽  
Dale L. Huber ◽  
Todd C. Monson
Keyword(s):  
Power Electronics ◽  
Magnetic Materials ◽  
Wide Bandgap ◽  
Electrical Machines ◽  
Soft Magnetic Materials ◽  
Full Potential ◽  
Soft Magnetic ◽  
Efficient Operation ◽  
High Rotational Speed ◽  
Electronics And Electrical

Soft magnetic materials are key to the efficient operation of the next generation of power electronics and electrical machines (motors and generators). Many new materials have been introduced since Michael Faraday’s discovery of magnetic induction, when iron was the only option. However, as wide bandgap semiconductor devices become more common in both power electronics and motor controllers, there is an urgent need to further improve soft magnetic materials. These improvements will be necessary to realize the full potential in efficiency, size, weight, and power of high-frequency power electronics and high–rotational speed electrical machines. Here we provide an introduction to the field of soft magnetic materials and their implementation in power electronics and electrical machines. Additionally, we review the most promising choices available today and describe emerging approaches to create even better soft magnetic materials.

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