Wide Bandgap Semiconductor Opportunities in Power Electronics

2018 ◽  
Author(s):  
Sujit Das ◽  
Laura D. Marlino ◽  
Kristina O. Armstrong
Keyword(s):  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor

SPICE Modeling of Advanced Silicon Carbide High Temperature Integrated Circuits

2016 ◽  
Vol 858 ◽  
pp. 1070-1073 ◽  
Author(s):  
Akin Akturk ◽  
Neil Goldsman ◽  
Ahayi Ahyi ◽  
Sarit Dhar ◽  
Brendan Cusack ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuits ◽  
Power Electronics ◽  
Process Design ◽  
Wide Band ◽  
Wide Bandgap ◽  
Semiconductor Technology ◽  
Wide Band Gap ◽  
Wide Bandgap Semiconductor ◽  
Generation Power

Due to the wide band-gap and high thermal conductivity of the 4H polytype of silicon carbide (SiC) as well as the maturity of this polytype’s fabrication processes, 4H-SiC offers an extremely attractive wide bandgap semiconductor technology for harsh environment applications spanning a variety of markets. To this end, 4H-SiC power electronics is gradually emerging as the technology of choice for next-generation power electronics; however, relatively limited progress has been made with regards to silicon carbide integrated circuits (ICs). We address this problem by developing fabrication and design methods for the SiC IC components themselves, as well as complementary SPICE type compact models for these components, and thereby facilitate the development of future SiC ICs and Process Design Kits (PDKs).

scholarly journals Challenges of Overcoming Defects in Wide Bandgap Semiconductor Power Electronics

Electronics ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 10
Author(s):  
Brett Setera ◽  
Aristos Christou
Keyword(s):  
Environmental Stress ◽  
Power Electronics ◽  
Extreme Environments ◽  
Wide Bandgap ◽  
Crystal Defects ◽  
Full Potential ◽  
X Rays ◽  
Material Synthesis ◽  
Wide Bandgap Semiconductor

The role of crystal defects in wide bandgap semiconductors and dielectrics under extreme environments (high temperature, high electric and magnetic fields, intense radiation, and mechanical stresses) found in power electronics is reviewed. Understanding defects requires real-time in situ material characterization during material synthesis and when the material is subjected to extreme environmental stress. Wide bandgap semiconductor devices are reviewed from the point of view of the role of defects and their impact on performance. It is shown that the reduction of defects represents a fundamental breakthrough that will enable wide bandgap (WBG) semiconductors to reach full potential. The main emphasis of the present review is to understand defect dynamics in WBG semiconductor bulk and at interfaces during the material synthesis and when subjected to extreme environments. High-brightness X-rays from synchrotron sources and advanced electron microscopy techniques are used for atomic-level material probing to understand and optimize the genesis and movement of crystal defects during material synthesis and extreme environmental stress. Strongly linked multi-scale modeling provides a deeper understanding of defect formation and defect dynamics in extreme environments.

Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays

2021 ◽  
Vol 119 (5) ◽  
pp. 051906
Author(s):  
C. Yu ◽  
P. Andalib ◽  
A. Sokolov ◽  
O. Fitchorova ◽  
W. Liang ◽  
...  
Keyword(s):  
Phased Arrays ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor
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