High voltage high power klystron drivers using flexible solid state IGBT modules

2000 ◽  
Author(s):  
R.J. Richter-Sand ◽  
R.J. Adler ◽  
K. Rust
Keyword(s):  
Solid State ◽  
High Voltage ◽  
High Power ◽  
Igbt Modules

Long Carrier Lifetimes in n-Type 4H-SiC Epilayers

2012 ◽  
Vol 717-720 ◽  
pp. 279-284 ◽  
Author(s):  
Paul B. Klein
Keyword(s):  
Solid State ◽  
High Voltage ◽  
High Power ◽  
Surface Passivation ◽  
Surface Recombination ◽  
Carrier Lifetimes ◽  
State Switching ◽  
Long Lifetime ◽  
Very High ◽  
Thick Layers

Recent advances in preparing n-type 4H-SiC with long carrier lifetimes have greatly enhanced the possibility of realizing commercially available, very high voltage and high power solid state switching diodes. For the range > several kV, vertical bipolar structures are required with drift layers exhibiting carrier lifetimes ≥ several µsec. Recently, low-doped epilayers with carrier lifetimes in excess of this have been demonstrated, thus approaching a goal that has been pursued for over a decade. Historically, the short lifetimes in early epitaxial layers (a few hundred nsec) were eventually identified with the Vc-related Z1/2 lifetime killer. Current strategies to minimize this defect are an essential ingredient in the procedure for obtaining long-lifetime material. In order to optimize the attainable lifetimes, it has been shown that in addition to low Z1/2 levels, very thick layers are required to minimize the effects of recombination in the substrate and surface passivation is also necessary to minimize surface recombination (S < 1000 cm/sec).

Material Requirements For High Voltage, High Power Igbt Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
R. Zehringer ◽  
A. Stuck ◽  
T. Lang
Keyword(s):  
High Voltage ◽  
High Power ◽  
Power Transmission ◽  
Future Developments ◽  
Igbt Modules ◽  
The Future ◽  
Materials Used ◽  
Material Requirements

AbstractThe two basic package types of current IGBT modules, which evolved from opposing requirements of traction and power transmission applications, are presented. It is shown that reliability and lifetime aspects given by traction puts most stringent limitations on the choice of materials at given cost targets. The materials used today for high power packaging and the future developments of high power IGBT-packages are discussed.

Auxiliary Power Supply for Medium-/High-Voltage and High-Power Solid-State Transformers

2020 ◽  
Vol 35 (5) ◽  
pp. 4791-4803 ◽  
Author(s):  
Jianqiang Liu ◽  
Shigeng Zhong ◽  
Jiepin Zhang ◽  
Yu Ai ◽  
Nan Zhao ◽  
...  
Keyword(s):  
Solid State ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Solid State Transformers ◽  
Auxiliary Power
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