Material Requirements For High Voltage, High Power Igbt Devices

1997 ◽  
Vol 483 ◽  
Author(s):  
R. Zehringer ◽  
A. Stuck ◽  
T. Lang
Keyword(s):  
High Voltage ◽  
High Power ◽  
Power Transmission ◽  
Future Developments ◽  
Igbt Modules ◽  
The Future ◽  
Materials Used ◽  
Material Requirements

AbstractThe two basic package types of current IGBT modules, which evolved from opposing requirements of traction and power transmission applications, are presented. It is shown that reliability and lifetime aspects given by traction puts most stringent limitations on the choice of materials at given cost targets. The materials used today for high power packaging and the future developments of high power IGBT-packages are discussed.

Analysis and Design of 3.3 kV IGBT Based Three-Level DC/DC Converter with High-Frequency Isolation and Current Doubler Rectifier

2009 ◽  
Vol 25 (25) ◽  
pp. 103-108
Author(s):  
Dmitri Vinnikov ◽  
Tanel Jalakas ◽  
Indrek Roasto
Keyword(s):  
High Voltage ◽  
High Frequency ◽  
Power Converter ◽  
Rolling Stock ◽  
Analysis And Design ◽  
Auxiliary Power ◽  
Igbt Modules ◽  
Isolation Transformer ◽  
New Generation ◽  
Generation Power

Analysis and Design of 3.3 kV IGBT Based Three-Level DC/DC Converter with High-Frequency Isolation and Current Doubler RectifierThe paper presents the findings of a R&D project connected to the development of auxiliary power supply (APS) for the high-voltage DC-fed rolling stock applications. The aim was to design a new-generation power converter utilizing high-voltage IGBT modules, which can outpace the predecessors in terms of power density, i.e. to provide more power for smaller volumetric space. The topology proposed is 3.3 kV IGBT-based three-level neutral point clamped (NPC) half-bridge with high-frequency isolation transformer and current doubler rectifier that fulfils all the targets imposed by the designers. Despite an increased component count the proposed converter is very simple in design and operation. The paper provides an overview of the design with several recommendations and guidelines. Moreover, the simulation and experimental results are discussed and the performance evaluation of the proposed converter is presented.

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

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