Development of a solid state versatile pulsar for high voltage and high power applications

Author(s):  
Rahul Varma ◽  
K.S. Sangwan
Keyword(s):  
2012 ◽  
Vol 717-720 ◽  
pp. 279-284 ◽  
Author(s):  
Paul B. Klein

Recent advances in preparing n-type 4H-SiC with long carrier lifetimes have greatly enhanced the possibility of realizing commercially available, very high voltage and high power solid state switching diodes. For the range > several kV, vertical bipolar structures are required with drift layers exhibiting carrier lifetimes ≥ several µsec. Recently, low-doped epilayers with carrier lifetimes in excess of this have been demonstrated, thus approaching a goal that has been pursued for over a decade. Historically, the short lifetimes in early epitaxial layers (a few hundred nsec) were eventually identified with the Vc-related Z1/2 lifetime killer. Current strategies to minimize this defect are an essential ingredient in the procedure for obtaining long-lifetime material. In order to optimize the attainable lifetimes, it has been shown that in addition to low Z1/2 levels, very thick layers are required to minimize the effects of recombination in the substrate and surface passivation is also necessary to minimize surface recombination (S < 1000 cm/sec).


2020 ◽  
Vol 35 (5) ◽  
pp. 4791-4803 ◽  
Author(s):  
Jianqiang Liu ◽  
Shigeng Zhong ◽  
Jiepin Zhang ◽  
Yu Ai ◽  
Nan Zhao ◽  
...  

1996 ◽  
Vol 24 (Supplement) ◽  
pp. 85-88
Author(s):  
H. Kan ◽  
T. Kanzaki ◽  
H. Miyajima ◽  
Y. Ito ◽  
K. Matsui ◽  
...  

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