Gallium phosphide nanowires for optoelectronic devices

2016 ◽  
Author(s):  
Umesh Rizal ◽  
Bibhu P. Swain ◽  
Bhabani S. Swain
Keyword(s):  
Gallium Phosphide ◽  
Optoelectronic Devices

Single GaP Nanowire Nonlinear Characterization with the aid of Optical Trap

Nanoscale ◽  
2021 ◽  
Author(s):  
Alexey D. Bolshakov ◽  
Ivan I Shishkin ◽  
Andrey Machnev ◽  
Mihail Petrov ◽  
Demid Kirilenko ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Gallium Phosphide ◽  
Optical Trap ◽  
Optoelectronic Devices ◽  
Semiconductor Nanowires ◽  
Nonlinear Characterization

Semiconductor nanowires provide numerous capabilities to advance development of future optoelectronic devices. Among III-V material family, gallium phosphide (GaP) is an attractive platform with low optical absorption and high nonlinear...

LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

1983 ◽  
Vol 44 (C4) ◽  
pp. C4-233-C4-241
Author(s):  
B. Hamilton ◽  
A. R. Peaker ◽  
D. R. Wight
Keyword(s):  
Gallium Phosphide ◽  
Deep Level

KINETICS OF FIELD EVAPORATION OF GALLIUM PHOSPHIDE IN THE PRESENCE OF HYDROGEN

1989 ◽  
Vol 50 (C8) ◽  
pp. C8-141-C8-146
Author(s):  
A. GAUSSMANN ◽  
W. DRACHSEL ◽  
J. H. BLOCK
Keyword(s):  
Gallium Phosphide ◽  
Field Evaporation ◽  
Kinetics Of

Strain Engineering in 2D Materials: Towards Strain Tunable Optoelectronic Devices

2019 ◽  
Author(s):  
Andres Castellanos-Gomez ◽  
Patricia Gant ◽  
Riccardo Frisenda
Keyword(s):  
2D Materials ◽  
Optoelectronic Devices ◽  
Strain Engineering

High Performance Optoelectronic Devices Based on Bright Perovskite Nanocrystals Synthesized at Room Temperature

2018 ◽  
Author(s):  
Sotirios Christodoulou ◽  
Francesco Di Stasio ◽  
Santanu Pradhan ◽  
Inigo Ramiro ◽  
Yu Bi ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Optoelectronic Devices ◽  
Perovskite Nanocrystals

Visible Laser Probing (VLP) with GaP Solid Immersion Lens Demonstrating 110 nm Resolution in Common Laser Probing Applications

2016 ◽  
Author(s):  
Travis Eiles ◽  
Patrick Pardy
Keyword(s):  
Gallium Phosphide ◽  
Fault Isolation ◽  
Solid Immersion Lens ◽  
Laser Probing ◽  
Isolation Methods ◽  
Visible Laser ◽  
High Level ◽  
Industry Needs ◽  
Diameter Reduction ◽  
Better Than

Abstract This paper demonstrates a breakthrough method of visible laser probing (VLP), including an optimized 577 nm laser microscope, visible-sensitive detector, and an ultimate-resolution gallium phosphide-based solid immersion lens on the 10 nm node, showing a 110 nm resolution. This is 2x better than what is achieved with the standard suite of probing systems using typical infrared (IR) wavelengths today. Since VLP provides a spot diameter reduction of 0.5x over IR methods, it is reasonable, based simply on geometry, to project that VLP using the 577 nm laser will meet the industry needs for laser probing for both the 10 nm and 7 nm process nodes. Based on its high level of optimization, including high resolution and specialized solid immersion lens, it is highly likely that this VLP technology will be one of the last optically-based fault isolation methods successfully used.

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