Single GaP Nanowire Nonlinear Characterization with the aid of Optical Trap

Nanoscale ◽  
2021 ◽  
Author(s):  
Alexey D. Bolshakov ◽  
Ivan I Shishkin ◽  
Andrey Machnev ◽  
Mihail Petrov ◽  
Demid Kirilenko ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Gallium Phosphide ◽  
Optical Trap ◽  
Optoelectronic Devices ◽  
Semiconductor Nanowires ◽  
Nonlinear Characterization

Semiconductor nanowires provide numerous capabilities to advance development of future optoelectronic devices. Among III-V material family, gallium phosphide (GaP) is an attractive platform with low optical absorption and high nonlinear...

scholarly journals Novel Two-Dimensional Layered MoSi2Z4 (Z = P, As): New Promising Optoelectronic Materials

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 559
Author(s):  
Hui Yao ◽  
Chao Zhang ◽  
Qiang Wang ◽  
Jianwei Li ◽  
Yunjin Yu ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Incident Light ◽  
Optoelectronic Devices ◽  
Large Family ◽  
Middle Layer ◽  
Optoelectronic Device ◽  
First Principles Calculation ◽  
Polarization Angle ◽  
Two Dimensional ◽  
Conducting Materials

Very recently, two new two-dimensional (2D) layered semi-conducting materials MoSi2N4 and WSi2N4 were successfully synthesized in experiments, and a large family of these two 2D materials, namely MA2Z4, was also predicted theoretically (Science, 369, 670 (2020)). Motivated by this exciting family, in this work, we systematically investigate the mechanical, electronic and optical properties of monolayer and bilayer MoSi2P4 and MoSi2As4 by using the first-principles calculation method. Numerical results indicate that both monolayer and bilayer MoSi2Z4 (Z = P, As) present good structural stability, isotropic mechanical parameters, moderate bandgap, favorable carrier mobilities, remarkable optical absorption, superior photon responsivity and external quantum efficiency. Especially, due to the wave-functions of band edges dominated by d orbital of the middle-layer Mo atoms are screened effectively, the bandgap and optical absorption hardly depend on the number of layers, providing an added convenience in the experimental fabrication of few-layer MoSi2Z4-based electronic and optoelectronic devices. We also build a monolayer MoSi2Z4-based 2D optoelectronic device, and quantitatively evaluate the photocurrent as a function of energy and polarization angle of the incident light. Our investigation verifies the excellent performance of a few-layer MoSi2Z4 and expands their potential application in nanoscale electronic and optoelectronic devices.

scholarly journals Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Bruno C. da Silva ◽  
Odilon D. D. Couto ◽  
Hélio T. Obata ◽  
Mauricio M. de Lima ◽  
Fábio D. Bonani ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Gallium Phosphide ◽  
Direct Band Gap ◽  
Direct Band

scholarly journals Author Correction: Optical Absorption Exhibits Pseudo-Direct Band Gap of Wurtzite Gallium Phosphide

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Bruno C. da Silva ◽  
Odilon D. D. Couto ◽  
Hélio T. Obata ◽  
Mauricio M. de Lima ◽  
Fábio D. Bonani ◽  
...  
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Gallium Phosphide ◽  
Direct Band Gap ◽  
Direct Band

Tuning Optical Absorption and Emission of Sub-Nanometer Gold-Caged Metal Systems M@Au14 by Substitutional Doping

2006 ◽  
Vol 3 (2) ◽  
pp. 312-314 ◽  
Author(s):  
John R. H. Xie ◽  
Chiu Fung Cheung ◽  
Jijun Zhao
Keyword(s):  
Optical Absorption ◽  
Spectral Properties ◽  
Near Infrared ◽  
Experimental Studies ◽  
Optoelectronic Devices ◽  
Wavelength Region ◽  
Optical Excitation ◽  
Substitutional Doping ◽  
Energy Gaps ◽  
Tuning Scheme

Gao, Bulusu and Zeng have recently reported a new series of isoelectronic, sub-nanometer gold-caged metal systems M@Au14 which have large energy gaps than icosahedral W@Au12 and Au32 and tetrahedral Au20. In this communication, we propose a "tuning" scheme, substitutional-doping, to achieve the tunable optical excitation and emission of M@Au14 over a broad wavelength region. For example, the optical absorption gaps of isoelectronic M@Au14 could be tuned from the near infrared to green by substituting the metal M with group IIIB, IVB, and VB constituents in the periodic table. Our results provide basic guidelines for further experimental studies on the spectral properties of M@Au14 as well as for the development of M@Au14-based tunable optoelectronic devices.

Optical absorption in neutron irradiated gallium phosphide

1973 ◽  
Vol 18 (2) ◽  
pp. 213-216
Author(s):  
V. Ya. Pivovarov ◽  
V. D. Tkachev
Keyword(s):  
Optical Absorption ◽  
Gallium Phosphide

Intrinsic Optical Absorption of Gallium Phosphide between 2.33 and 3.12 eV

1967 ◽  
Vol 38 (9) ◽  
pp. 3551-3556 ◽  
Author(s):  
P. J. Dean ◽  
G. Kaminsky ◽  
R. B. Zetterstrom
Keyword(s):  
Optical Absorption ◽  
Gallium Phosphide

scholarly journals Nanowire Lasers

Nanophotonics ◽  
2015 ◽  
Vol 4 (1) ◽  
pp. 90-107 ◽  
Author(s):  
C. Couteau ◽  
A. Larrue ◽  
C. Wilhelm ◽  
C. Soci
Keyword(s):  
Data Storage ◽  
Optoelectronic Devices ◽  
Building Blocks ◽  
Semiconductor Nanowires ◽  
Stimulated Emission ◽  
Light Sources ◽  
Laser Systems ◽  
Material Choice ◽  
Low Threshold ◽  
Nanowire Lasers

Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

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