scholarly journals Three-dimensional memory vectorization for high bandwidth media memory systems

2003 ◽  
Author(s):  
J. Corbal ◽  
R. Espasa ◽  
M. Valero
Keyword(s):  
Three Dimensional ◽  
Memory Systems ◽  
High Bandwidth

scholarly journals High-bandwidth data memory systems for superscalar processors

1991 ◽  
Vol 26 (4) ◽  
pp. 53-62 ◽  
Author(s):  
Gurindar S. Sohi ◽  
Manoj Franklin
Keyword(s):  
Memory Systems ◽  
Superscalar Processors ◽  
Data Memory ◽  
High Bandwidth

scholarly journals Ultrafast nonlocal collective dynamics of Kane plasmon-polaritons in a narrow-gap semiconductor

2019 ◽  
Vol 5 (8) ◽  
pp. eaau9956 ◽  
Author(s):  
A. Charnukha ◽  
A. Sternbach ◽  
H. T. Stinson ◽  
R. Schlereth ◽  
C. Brüne ◽  
...  
Keyword(s):  
Fiber Optics ◽  
Near Field ◽  
Three Dimensional ◽  
Large Momentum ◽  
Light Sources ◽  
New States ◽  
High Bandwidth ◽  
And Control ◽  
2D And 3D ◽  
Plasmon Polaritons

The observation of ultrarelativistic fermions in condensed-matter systems has uncovered a cornucopia of novel phenomenology as well as a potential for effective ultrafast light engineering of new states of matter. While the nonequilibrium properties of two- and three-dimensional (2D and 3D) hexagonal crystals have been studied extensively, our understanding of the photoinduced dynamics in 3D single-valley ultrarelativistic materials is, unexpectedly, lacking. Here, we use ultrafast scanning near-field optical spectroscopy to access and control nonequilibrium large-momentum plasmon-polaritons in thin films of a prototypical narrow-bandgap semiconductor Hg0.81Cd0.19Te. We demonstrate that these collective excitations exhibit distinctly nonclassical scaling with electron density characteristic of the ultrarelativistic Kane regime and experience ultrafast initial relaxation followed by a long-lived highly coherent state. Our observation and ultrafast control of Kane plasmon-polaritons in a semiconducting material using light sources in the standard telecommunications fiber-optics window open a new avenue toward high-bandwidth coherent information processing in next-generation plasmonic circuits.

Configurable-ECC: Architecting a Flexible ECC Scheme to Support Different Sized Accesses in High Bandwidth Memory Systems

2019 ◽  
Vol 68 (5) ◽  
pp. 646-659
Author(s):  
Hsing-Min Chen ◽  
Shin-Ying Lee ◽  
Trevor Mudge ◽  
Carole-Jean Wu ◽  
Chaitali Chakrabarti
Keyword(s):  
Memory Systems ◽  
High Bandwidth

Overview and Technical Trend of Chain FeRAM

2010 ◽  
Vol 1250 ◽  
Author(s):  
Daisaburo Takashima
Keyword(s):  
Marketing Strategy ◽  
High Speed ◽  
Low Voltage ◽  
Disk Drive ◽  
Memory Systems ◽  
Ferroelectric Capacitor ◽  
Performance Improvements ◽  
Cell Signal ◽  
Low Voltage Operation ◽  
High Bandwidth

AbstractA chain FeRAMTM is the best solution to realize high-speed and high-bandwidth nonvolatile RAM with low power dissipation. In this paper, the overview of chain FeRAM, the technical trend for FeRAM scaling and the marketing strategy are presented. First of all, the concept and performance of chain FeRAM are described. Secondly, the status and history of chain FeRAM development are presented. Thirdly, four kinds of scaling strategies for chain FeRAM are presented; (1) A shrink trend of chain cell including a capacitor plug shared with twin cells, and process techniques including Ir/TiAlN-barrier metal and MOCVD-PZT with SrRuO3 electrode, which are installed in 16Kb, 8Mb, 32Mb, 64Mb and 128Mb chain FeRAMs, (2) Capacitor damage suppression processes to reinforce step coverage and protect H2 damage even in 0.1μm2 capacitor of 128Mb, (3) A scalable array architecture such as an octal / quad bitline architecture to reduce bitline capacitance and ensure enough cell signal in scaled ferroelectric capacitor, and (4) A ferroelectric capacitor overdrive technique by driving shield-bitlines to enlarge tail-to-tail cell signal in low voltage operation of 1.3V. Fourthly, future direction of chain FeRAM is discussed. The vertical capacitor is one of candidates for gigabit-scale chain FeRAMs, and solves signal problem and achieves small 4F2 cell without contact formation. Finally, the marketing strategy to take full advantage of chain FeRAM is presented. A nonvolatile FeRAM cache is the promising candidate to achieve high bandwidth memory systems. Applications of chain FeRAM to solid-state drive (SSD) and hard-disk drive (HDD) and their system performance improvements are demonstrated.

Experience and design: Bringing in the brain

2021 ◽  
pp. 571-642
Author(s):  
Michael A. Arbib
Keyword(s):  
Dimensional Space ◽  
Three Dimensional ◽  
Memory Systems ◽  
External Memory ◽  
Collaborative Studies ◽  
Current Design ◽  
Long Term Working Memory ◽  
The Brain

The IBSEN model of Imagination in Brain Systems for Episodes and Navigation explores how the architect’s experience is brought to bear in the design of architecture by building on the VISIONS model of understanding a visual scene and the TAM-WGM model of navigation. IBSEN develops the idea that a building provides both views from various viewpoints and places where particular experiences can be felt, and actions can be performed. For this, the design must support a variety of scripts for both practical and contemplative action and the cognitive maps that relate places for them. Nodes from different maps may be combined as scripts are harmonized with respect to a specific embedding of places in three-dimensional space. The chapter examines the role of the hippocampus in episodic memory and imagination, and observes that memory and imagination, episodic or not, are construction processes. During design, long-term working memory links internal and external memory systems, providing priority access to (but not only to) memory fragments that have proved relevant to the current design process. The designer in some sense “inverts” imagined experiences and behaviors of users of the forthcoming building. As the book ends, the author notes that we are only at the beginning of new collaborative studies that take cog/neuroscience out of the lab and into the building and the street.

scholarly journals High-bandwidth data memory systems for superscalar processors

1991 ◽  
Vol 25 (Special Issue) ◽  
pp. 53-62 ◽  
Author(s):  
Gurindar S. Sohi ◽  
Manoj Franklin
Keyword(s):  
Memory Systems ◽  
Superscalar Processors ◽  
Data Memory ◽  
High Bandwidth
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