Improved uniformity of self-organized In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As quantum wires grown on (775)B-oriented InP substrate by molecular beam epitaxy

2003 ◽  
Author(s):  
Y. Ohno ◽  
S. Shimomura ◽  
S. Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Self Organized ◽  
Inp Substrate

1.5 μm Range Self-Organized In0.65Ga0.35As/In0.52Al0.48As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
K. Hyodo ◽  
Y. Ohno ◽  
H. Kanamori ◽  
T. Kitada ◽  
S. Shimomura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wire ◽  
Room Temperature ◽  
Molecular Beam ◽  
Polarization Degree ◽  
Self Organized ◽  
Best Value ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Quantum Well Layer

ABSTRACTHigh quality quantum wire (QWR) structures with an emitting wavelength in the 1.5-μm range were self-organized in an In0.65Ga0.35As/In0.52Al0.48As quantum well layer grown on a (775)B-oriented InP substrate by molecular beam epitaxy. Photoluminescence (PL) from the (775)B In0.65Ga0.35As/In0.52Al0.48As QWRs with a nominal well width of 4.8 nm was observed at 1.43 μm at 12 K, which corresponds to a PL wavelength of about 1.5 μm at room temperature. The PL peak was considerably polarized along the wire direction with a polarization degree of P [= (I∥ - I⊥) / (I∥ + I] ⊥)] = 0.14, indicating its good one-dimensionality. The FWHM of the PL peak was as small as 17 meV, which is the best value for InGaAs QWRs on InP substrates.

Self‐Organized Growth of Quantum Dots and Quantum Wires by Combination of Focused Ion Beams and Molecular Beam Epitaxy

2018 ◽  
Vol 256 (7) ◽  
pp. 1800375
Author(s):  
Sven Scholz ◽  
Rüdiger Schott ◽  
Marcel Schmidt ◽  
Minisha Mehta ◽  
Arne Ludwig ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Self Organized

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2524-2528 ◽  
Author(s):  
Shinji Kuroda ◽  
Yoshikazu Terai ◽  
Kôki Takita ◽  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Excitonic Luminescence

Effect of annealing on formation of self-assembled (In,Ga)As quantum wires on GaAs (100) by molecular beam epitaxy

2002 ◽  
Vol 92 (7) ◽  
pp. 4043-4046 ◽  
Author(s):  
T. Mano ◽  
R. Nötzel ◽  
G. J. Hamhuis ◽  
T. J. Eijkemans ◽  
J. H. Wolter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Self Assembled
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