Laser operation at room temperature of self-organized In[sub 0.1]Ga[sub 0.9]As/(GaAs)[sub 6](AlAs)[sub 1] quantum wires grown on (775)B-oriented GaAs substrates by molecular beam epitaxy

2000 ◽  
Vol 18 (3) ◽  
pp. 1672 ◽  
Author(s):  
Yasuhide Ohno ◽  
Masataka Higashiwaki ◽  
Satoshi Shimomura ◽  
Satoshi Hiyamizu ◽  
Seiji Ikawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Laser Operation ◽  
Self Organized ◽  
Gaas Substrates

High-density quantum wires naturally formed on (7 7 5)B-oriented GaAs substrates by molecular beam epitaxy

1997 ◽  
Vol 175-176 ◽  
pp. 814-818 ◽  
Author(s):  
M. Higashiwaki ◽  
M. Yamamoto ◽  
S. Shimomura ◽  
A. Adachi ◽  
S. Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Wires ◽  
High Density ◽  
Gaas Substrates

Selective Formation of Self-Organized InAs QDs on Patterned GaAs Substrates by Molecular Beam Epitaxy

2005 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Sinichiro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

Room-Temperature Operation of In0.5Ga0.5As Quantum Dot Lasers Grown on Misoriented GaAs Substrates by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 605-607 ◽  
Author(s):  
Tzer-En Nee ◽  
Nien-Tze Yeh ◽  
Po-Wen Shiao ◽  
Jen-Inn Chyi ◽  
Ching-Ting Lee
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Dot ◽  
Room Temperature ◽  
Molecular Beam ◽  
Quantum Dot Lasers ◽  
Gaas Substrates ◽  
Room Temperature Operation

Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy

2006 ◽  
Vol 45 (4B) ◽  
pp. 3556-3559 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Shin-ichioro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

1.5 μm Range Self-Organized In0.65Ga0.35As/In0.52Al0.48As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy

2002 ◽  
Vol 744 ◽  
Author(s):  
K. Hyodo ◽  
Y. Ohno ◽  
H. Kanamori ◽  
T. Kitada ◽  
S. Shimomura ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wire ◽  
Room Temperature ◽  
Molecular Beam ◽  
Polarization Degree ◽  
Self Organized ◽  
Best Value ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Quantum Well Layer

ABSTRACTHigh quality quantum wire (QWR) structures with an emitting wavelength in the 1.5-μm range were self-organized in an In0.65Ga0.35As/In0.52Al0.48As quantum well layer grown on a (775)B-oriented InP substrate by molecular beam epitaxy. Photoluminescence (PL) from the (775)B In0.65Ga0.35As/In0.52Al0.48As QWRs with a nominal well width of 4.8 nm was observed at 1.43 μm at 12 K, which corresponds to a PL wavelength of about 1.5 μm at room temperature. The PL peak was considerably polarized along the wire direction with a polarization degree of P [= (I∥ - I⊥) / (I∥ + I] ⊥)] = 0.14, indicating its good one-dimensionality. The FWHM of the PL peak was as small as 17 meV, which is the best value for InGaAs QWRs on InP substrates.

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