Self‐Organized Growth of Quantum Dots and Quantum Wires by Combination of Focused Ion Beams and Molecular Beam Epitaxy

2018 ◽  
Vol 256 (7) ◽  
pp. 1800375
Author(s):  
Sven Scholz ◽  
Rüdiger Schott ◽  
Marcel Schmidt ◽  
Minisha Mehta ◽  
Arne Ludwig ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Self Organized

Excitonic Luminescence from Self-Organized Quantum Dots of CdTe Grown by Molecular Beam Epitaxy

1999 ◽  
Vol 38 (Part 1, No. 4B) ◽  
pp. 2524-2528 ◽  
Author(s):  
Shinji Kuroda ◽  
Yoshikazu Terai ◽  
Kôki Takita ◽  
Tsuyoshi Okuno ◽  
Yasuaki Masumoto
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized ◽  
Excitonic Luminescence

Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy

2005 ◽  
Vol 276 (1-2) ◽  
pp. 72-76 ◽  
Author(s):  
Z.L. Miao ◽  
S.J. Chua ◽  
Y.H. Chye ◽  
P. Chen ◽  
S. Tripathy
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized

Selective Formation of Self-Organized InAs Quantum Dots Grown on Patterned GaAs Substrates by Molecular Beam Epitaxy

2006 ◽  
Vol 45 (4B) ◽  
pp. 3556-3559 ◽  
Author(s):  
Akio Ueta ◽  
Kouichi Akahane ◽  
Shin-ichioro Gozu ◽  
Naokatsu Yamamoto ◽  
Naoki Ohtani
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Inas Quantum Dots ◽  
Self Organized ◽  
Gaas Substrates ◽  
Selective Formation

scholarly journals Self Assembly of semiconductor nanostructures

Respuestas ◽  
2016 ◽  
Vol 12 (2) ◽  
pp. 47-51
Author(s):  
Máximo López-López ◽  
Esteban Cruz-Hernández ◽  
Isaac Martínez-Velis ◽  
Juan Salvador Rojas-Ramírez ◽  
Manolo Ramirez-Lopez ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Self Assembly ◽  
Molecular Beam ◽  
Quantum Wires ◽  
Preferential Growth ◽  
Growth Method ◽  
Strong Surface ◽  
Self Assembled

 Abstract In this work we present the growth and characterization of GaAs self-assembled quantum wires (SAQWRs), and InAs self-assembled quantum dots (SAQDs) by molecular beam epitaxy on (631)-oriented GaAs substrates. Adatoms on the (631) crystal plane present a strong surface diffusion anisotropy which we use to induce preferential growth along one direction to produce SAQWRs. On the other hand, InAs SAQDs were obtained on GaAs(631) with SAQWRs by the Stransky–Krastanov (S-K) growth method. SAQDs grown directly on (631) substrates presented considerable fluctuations in size. We study the effects of growing a stressor layer before the SAQDs formation to reduce these fluctuations.Keywords : Quantum wires, quantum dots; selfassembly; molecular beam epitaxy.

InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy

2001 ◽  
Vol 227-228 ◽  
pp. 1010-1015 ◽  
Author(s):  
S Kiravittaya ◽  
R Songmuang ◽  
P Changmuang ◽  
S Sopitpan ◽  
S Ratanathammaphan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized

Magneto-photoluminescence from self-organized quantum dots of Cd1−xMnxTe grown by molecular beam epitaxy

2000 ◽  
Vol 87-89 ◽  
pp. 396-398 ◽  
Author(s):  
Yoshikazu Terai ◽  
Shinji Kuroda ◽  
Kôki Takita ◽  
Tadashi Takamasu ◽  
Giyuu Kido
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Self Organized
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