Gas source MBE growth of TlInGaAs/InP laser diodes and their first successful room temperature operation

2003 ◽  
Author(s):  
H. Asahi ◽  
H.J. Lee ◽  
A. Fujiwara ◽  
Y.K. Zhou
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe ◽  
Room Temperature Operation

Room Temperature Operation of Visible (λ =658.6 nm) InGaAsP DH Laser Diodes on GaAsP

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L551-L552 ◽  
Author(s):  
Sadao Fujii ◽  
Shiro Sakai ◽  
Masayoshi Umeno
Keyword(s):  
Room Temperature ◽  
Laser Diodes ◽  
Room Temperature Operation

Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

1997 ◽  
Vol 175-176 ◽  
pp. 150-155 ◽  
Author(s):  
K. Iwata ◽  
H. Asahi ◽  
K. Asami ◽  
S. Gonda
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe ◽  
Rich Side

Gas source MBE growth of InP under in-rich conditions

2005 ◽  
Author(s):  
Tsuen-Lin Lee ◽  
Jin-Shang Liu ◽  
Hao-Hsiung Lin
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas Source MBE Growth and Characterization of TlInGaAs/InP DH Structures for Temperature-independent Wavelength LD Application

2001 ◽  
Vol 692 ◽  
Author(s):  
Hajime Asahi ◽  
Hwe-Jae Lee ◽  
Akiko Mizobata ◽  
Kenta Konishi ◽  
Osamu Maeda ◽  
...  
Keyword(s):  
Wavelength Division Multiplexing ◽  
Communication Systems ◽  
Laser Diodes ◽  
Optical Fiber Communication ◽  
Lasing Wavelength ◽  
Fiber Communication ◽  
Wavelength Division ◽  
Gas Source ◽  
Peak Energy ◽  
Gas Source Mbe

AbstractTlInGaAs/InP double-hetero (DH) structures were grown on (100) InP substrates by gas source MBE. The photoluminescence (PL) peak energy variation with temperature decreased with increasing Tl composition. For the DH with a Tl composition of 13%, the PL peak energy varied only slightly with temperature (−0.03 meV/K). This value corresponds to a wavelength variation of 0.04 nm/K and is much smaller than that of the lasing wavelength of InGaAsP/InP distributed feedback laser diodes (0.1 nm/K). TlInGaAs/InP light emitting diodes with 6% Tl composition were fabricated and the small temperature variation of the electroluminescence peak energy (−0.09 meV/K) was observed at the wavelength around 1.58 μm. The results are promising to realize the temperature-independent wavelength laser diodes, which are important in the wavelength division multiplexing (WDM) optical fiber communication systems.

Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

1999 ◽  
Vol 25 (1-2) ◽  
pp. 477-479 ◽  
Author(s):  
J.L. Liu ◽  
S.J. Cai ◽  
G.L. Jin ◽  
Y.S. Tang ◽  
K.L. Wang
Keyword(s):  
Si Substrate ◽  
Mbe Growth ◽  
Gas Source ◽  
Nano Wires ◽  
Gas Source Mbe
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