Gas-source MBE growth of freestanding Si nano-wires on Au/Si substrate

1999 ◽  
Vol 25 (1-2) ◽  
pp. 477-479 ◽  
Author(s):  
J.L. Liu ◽  
S.J. Cai ◽  
G.L. Jin ◽  
Y.S. Tang ◽  
K.L. Wang
Keyword(s):  
Si Substrate ◽  
Mbe Growth ◽  
Gas Source ◽  
Nano Wires ◽  
Gas Source Mbe

Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

1997 ◽  
Vol 175-176 ◽  
pp. 150-155 ◽  
Author(s):  
K. Iwata ◽  
H. Asahi ◽  
K. Asami ◽  
S. Gonda
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe ◽  
Rich Side

Gas source MBE growth of InP under in-rich conditions

2005 ◽  
Author(s):  
Tsuen-Lin Lee ◽  
Jin-Shang Liu ◽  
Hao-Hsiung Lin
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

New semiconductors TlInGaP and their gas source MBE growth

1997 ◽  
Vol 175-176 ◽  
pp. 1195-1199 ◽  
Author(s):  
H. Asahi ◽  
M. Fushida ◽  
K. Yamamoto ◽  
K. Iwata ◽  
H. Koh ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas-source MBE growth of strain-relaxed Si1−xCx on Si(100) substrates

2013 ◽  
Vol 378 ◽  
pp. 212-217 ◽  
Author(s):  
Keisuke Arimoto ◽  
Shoichiro Sakai ◽  
Hiroshi Furukawa ◽  
Junji Yamanaka ◽  
Kiyokazu Nakagawa ◽  
...  
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe

Gas Source MBE Growth of GaAs/AlGaAs Heterojunction Bipolar Transistor with a Carbon Doped Base Using Only Gaseous Sources

1991 ◽  
Vol 30 (Part 1, No. 3) ◽  
pp. 464-465 ◽  
Author(s):  
Adarsh Sandhu ◽  
Toshio Fujii ◽  
Hideyasu Ando ◽  
Tsuyoshi Takahashi ◽  
Hideaki Ishikawa ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Mbe Growth ◽  
Carbon Doped ◽  
Gas Source ◽  
Gas Source Mbe
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