High-Efficiency InGaN/GaN Dot-in-a-Wire Red Light-Emitting Diodes

2012 ◽  
Vol 24 (4) ◽  
pp. 321-323 ◽  
Author(s):  
Hieu Pham Trung Nguyen ◽  
Shaofei Zhang ◽  
Kai Cui ◽  
Andreas Korinek ◽  
Gianluigi A. Botton ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Light Emitting

scholarly journals High-efficiency CdSe/CdS nanorod–based red light–emitting diodes

2019 ◽  
Vol 27 (6) ◽  
pp. 7935 ◽  
Author(s):  
Yanbin Zhang ◽  
Fengjuan Zhang ◽  
Hongzhe Wang ◽  
Lei Wang ◽  
Fangfang Wang ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Light Emitting

High-Efficiency Red Light-Emitting Diodes Based on Multiple Quantum Wells of Phenylbutylammonium-Cesium Lead Iodide Perovskites

ACS Photonics ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 587-594 ◽  
Author(s):  
Zhuofei He ◽  
Yang Liu ◽  
Zhaoliang Yang ◽  
Jing Li ◽  
Jieyuan Cui ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Lead Iodide ◽  
Light Emitting

scholarly journals Color-pure red light-emitting diodes based on two-dimensional lead-free perovskites

2020 ◽  
Vol 6 (42) ◽  
pp. eabb0253
Author(s):  
Fanglong Yuan ◽  
Xiaopeng Zheng ◽  
Andrew Johnston ◽  
Ya-Kun Wang ◽  
Chun Zhou ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Crystallization Rate ◽  
Lead Free ◽  
Forming Process ◽  
Information Display ◽  
Light Emitting ◽  
Wide Color Gamut ◽  
Display Technology

It remains a central challenge to the information display community to develop red light-emitting diodes (LEDs) that meet demanding color coordinate requirements for wide color gamut displays. Here, we report high-efficiency, lead-free (PEA)2SnI4 perovskite LEDs (PeLEDs) with color coordinates (0.708, 0.292) that fulfill the Rec. 2100 specification for red emitters. Using valeric acid (VA)—which we show to be strongly coordinated to Sn2+—we slow the crystallization rate of the perovskite, improving the film morphology. The incorporation of VA also protects tin from undesired oxidation during the film-forming process. The improved films and the reduced Sn4+ content enable PeLEDs with an external quantum efficiency of 5% and an operating half-life exceeding 15 hours at an initial brightness of 20 cd/m2. This work illustrates the potential of Cd- and Pb-free PeLEDs for display technology.

High-efficiency deep-red quantum-dot light-emitting diodes with type-II CdSe/CdTe core/shell quantum dots as emissive layers

2016 ◽  
Vol 4 (30) ◽  
pp. 7223-7229 ◽  
Author(s):  
Qingli Lin ◽  
Bin Song ◽  
Hongzhe Wang ◽  
Fengjuan Zhang ◽  
Fei Chen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Core Shell ◽  
Cdse Quantum Dots ◽  
Type Ii ◽  
Light Emitting ◽  
Cdte Core

Highly efficient deep-red light-emitting diodes (LEDs) fabricated by using type-II CdTe/CdSe quantum dots.

scholarly journals Understanding the luminescent nature of organic radicals for efficient doublet emitters and pure-red light-emitting diodes

2020 ◽  
Vol 19 (11) ◽  
pp. 1224-1229 ◽  
Author(s):  
Alim Abdurahman ◽  
Timothy J. H. Hele ◽  
Qinying Gu ◽  
Jiangbin Zhang ◽  
Qiming Peng ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Red Light ◽  
Organic Radicals ◽  
Light Emitting

High-efficiency, long-lifetime deep-blue organic light-emitting diodes

2021 ◽  
Vol 15 (3) ◽  
pp. 208-215 ◽  
Author(s):  
Soon Ok Jeon ◽  
Kyung Hyung Lee ◽  
Jong Soo Kim ◽  
Soo-Ghang Ihn ◽  
Yeon Sook Chung ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Deep Blue ◽  
Organic Light ◽  
Long Lifetime

scholarly journals High efficiency blue organic light-emitting diodes with below-bandgap electroluminescence

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Maria Vasilopoulou ◽  
Abd. Rashid bin Mohd Yusoff ◽  
Matyas Daboczi ◽  
Julio Conforto ◽  
Anderson Emanuel Ximim Gavim ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
High Mobility ◽  
Organic Light Emitting Diodes ◽  
Triplet Energy ◽  
Material Interface ◽  
Light Emitting ◽  
Thermally Activated ◽  
Organic Light ◽  
Hole Transporting

AbstractBlue organic light-emitting diodes require high triplet interlayer materials, which induce large energetic barriers at the interfaces resulting in high device voltages and reduced efficiencies. Here, we alleviate this issue by designing a low triplet energy hole transporting interlayer with high mobility, combined with an interface exciplex that confines excitons at the emissive layer/electron transporting material interface. As a result, blue thermally activated delay fluorescent organic light-emitting diodes with a below-bandgap turn-on voltage of 2.5 V and an external quantum efficiency (EQE) of 41.2% were successfully fabricated. These devices also showed suppressed efficiency roll-off maintaining an EQE of 34.8% at 1000 cd m−2. Our approach paves the way for further progress through exploring alternative device engineering approaches instead of only focusing on the demanding synthesis of organic compounds with complex structures.

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