High-Efficiency Red Light-Emitting Diodes Based on Multiple Quantum Wells of Phenylbutylammonium-Cesium Lead Iodide Perovskites

ACS Photonics ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 587-594 ◽  
Author(s):  
Zhuofei He ◽  
Yang Liu ◽  
Zhaoliang Yang ◽  
Jing Li ◽  
Jieyuan Cui ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Lead Iodide ◽  
Light Emitting

Thermal stability of Si-doped InGaN multiple-quantum wells for high efficiency light emitting diodes

2010 ◽  
Vol 108 (10) ◽  
pp. 102813 ◽  
Author(s):  
Sung-Nam Lee ◽  
Jihoon Kim ◽  
Kyoung-Kook Kim ◽  
Hyunsoo Kim ◽  
Han-Ki Kim
Keyword(s):  
Thermal Stability ◽  
Quantum Wells ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Si Doped ◽  
Thermal Stability Of

Study on Injection Efficiency in InGaN/GaN Multiple Quantum Wells Blue Light Emitting Diodes

2008 ◽  
Vol 1 ◽  
pp. 021101 ◽  
Author(s):  
Lai Wang ◽  
Jiaxing Wang ◽  
Hongtao Li ◽  
Guangyi Xi ◽  
Yang Jiang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Injection Efficiency ◽  
Light Emitting

Control of Barrier Width in Perovskite Multiple Quantum Wells for High Performance Green Light–Emitting Diodes

2018 ◽  
Vol 7 (3) ◽  
pp. 1801575 ◽  
Author(s):  
Maotao Yu ◽  
Chang Yi ◽  
Nana Wang ◽  
Liangdong Zhang ◽  
Renmeng Zou ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Barrier Width ◽  
Light Emitting

Two distinct carrier localization in green light-emitting diodes with InGaN/GaN multiple quantum wells

2014 ◽  
Vol 115 (8) ◽  
pp. 083112 ◽  
Author(s):  
Zhi Li ◽  
Junjie Kang ◽  
Bo Wei Wang ◽  
Hongjian Li ◽  
Yu Hsiang Weng ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diodes ◽  
Green Light ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting

scholarly journals GaN-based ultraviolet light-emitting diodes with AlN/GaN/InGaN multiple quantum wells

2015 ◽  
Vol 23 (7) ◽  
pp. A337 ◽  
Author(s):  
Hung-Ming Chang ◽  
Wei-Chih Lai ◽  
Wei-Shou Chen ◽  
Shoou-Jinn Chang
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Ultraviolet Light Emitting Diodes

High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

2020 ◽  
Vol 8 (3) ◽  
pp. 883-888 ◽  
Author(s):  
Yuan Li ◽  
Zhiheng Xing ◽  
Yulin Zheng ◽  
Xin Tang ◽  
Wentong Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Quantum Efficiency ◽  
High Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Multiple Quantum ◽  
High Quantum Efficiency ◽  
Light Emitting ◽  
Si Substrates

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

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