Reduced threshold current and enhanced mode selectivity in InGaN MQW lasers with deeply etched air/nitride distributed Bragg reflector

2002 ◽  
Author(s):  
C. Marinelli ◽  
L.J. Sargent ◽  
J.M. Rorison ◽  
R.V. Penty ◽  
I.H. White ◽  
...  
Keyword(s):  
Threshold Current ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Mode Selectivity

scholarly journals Вертикально-излучающие лазеры спектрального диапазона 1.55 mum, сформированные методом спекания

2018 ◽  
Vol 44 (1) ◽  
pp. 59
Author(s):  
А.В. Бабичев ◽  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
С.А. Блохин ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Modulation Frequency ◽  
Cutoff Frequency ◽  
Optical Power ◽  
Single Mode ◽  
Threshold Current ◽  
Bragg Reflector ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Aperture Diameter

AbstractThe results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

scholarly journals Effect of band gap renormalization on threshold current and efficiency of a distributed Bragg reflector laser

2000 ◽  
Vol 76 (19) ◽  
pp. 2653-2655 ◽  
Author(s):  
H. Wenzel ◽  
A. Klehr ◽  
G. Erbert ◽  
J. Sebastian ◽  
G. Tränkle ◽  
...  
Keyword(s):  
Band Gap ◽  
Threshold Current ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector

scholarly journals An electrically pumped surface-emitting semiconductor green laser

2020 ◽  
Vol 6 (1) ◽  
pp. eaav7523 ◽  
Author(s):  
Yong-Ho Ra ◽  
Roksana Tonny Rashid ◽  
Xianhe Liu ◽  
Sharif Md. Sadaf ◽  
Kishwar Mashooq ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Lattice Mismatch ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Blue Laser ◽  
Bragg Reflector ◽  
New Paradigm ◽  
Distributed Bragg Reflector ◽  
Order Of Magnitude

Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)–free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm2, which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.

scholarly journals InGaAs metamorphic laser power converters with distributed Bragg reflector for wavelength range λ=1 – 1.1 µm

2020 ◽  
Author(s):  
Nikolay A. Kalyuzhnyy ◽  
Viktor M. Emelyanov ◽  
Sergey A. Mintairov ◽  
Mariia V. Nahimovich ◽  
Roman A. Salii ◽  
...  
Keyword(s):  
Wavelength Range ◽  
Laser Power ◽  
Power Converters ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector
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