scholarly journals An electrically pumped surface-emitting semiconductor green laser

2020 ◽  
Vol 6 (1) ◽  
pp. eaav7523 ◽  
Author(s):  
Yong-Ho Ra ◽  
Roksana Tonny Rashid ◽  
Xianhe Liu ◽  
Sharif Md. Sadaf ◽  
Kishwar Mashooq ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Lattice Mismatch ◽  
Laser Diodes ◽  
Threshold Current ◽  
Green Laser ◽  
Blue Laser ◽  
Bragg Reflector ◽  
New Paradigm ◽  
Distributed Bragg Reflector ◽  
Order Of Magnitude

Surface-emitting semiconductor lasers have been widely used in data communications, sensing, and recently in Face ID and augmented reality glasses. Here, we report the first achievement of an all-epitaxial, distributed Bragg reflector (DBR)–free electrically injected surface-emitting green laser by exploiting the photonic band edge modes formed in dislocation-free gallium nitride nanocrystal arrays, instead of using conventional DBRs. The device operates at ~523 nm and exhibits a threshold current of ~400 A/cm2, which is over one order of magnitude lower compared to previously reported blue laser diodes. Our studies open a new paradigm for developing low-threshold surface-emitting laser diodes from the ultraviolet to the deep visible (~200 to 600 nm), wherein the device performance is no longer limited by the lack of high-quality DBRs, large lattice mismatch, and substrate availability.

scholarly journals Room Temperature CW Operation of GaN-based Blue Laser Diodes by GaInN/GaN optical guiding layers

2000 ◽  
Vol 5 (S1) ◽  
pp. 1-7 ◽  
Author(s):  
Masayoshi Koike ◽  
Shiro Yamasaki ◽  
Yuta Tezen ◽  
Seiji Nagai ◽  
Sho Iwayama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Continuous Wave ◽  
Laser Diodes ◽  
Threshold Current ◽  
Crystal Defects ◽  
Blue Laser ◽  
Buffer Layers ◽  
Continuous Wave Laser ◽  
Cw Operation ◽  
First Time

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

scholarly journals Demonstration of polarization control GaN-based micro-cavity lasers using a rigid high-contrast grating reflector

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Tsu-Chi Chang ◽  
Kuo-Bin Hong ◽  
Shuo-Yi Kuo ◽  
Tien-Chang Lu
Keyword(s):  
Semiconductor Lasers ◽  
Optical Pumping ◽  
Polarized Light ◽  
Transverse Magnetic ◽  
Bragg Reflector ◽  
Degree Of Polarization ◽  
High Contrast ◽  
Distributed Bragg Reflector ◽  
Output Mirror ◽  
High Contrast Grating

Abstract We reported on GaN microcavity (MC) lasers combined with one rigid TiO2 high-contrast grating (HCG) structure as the output mirror. The HCG structure was directly fabricated on the GaN structure without an airgap. The entire MC structure comprised a bottom dielectric distributed Bragg reflector; a GaN cavity; and a top HCG reflector, which was designed to yield high reflectance for transverse magnetic (TM)- or transverse electric (TE)-polarized light. The MC device revealed an operation threshold of approximately 0.79 MW/cm2 when pulsed optical pumping was conducted using the HCG structure at room temperature. The laser emission was TM polarized with a degree of polarization of 99.2% and had a small divergence angle of 14° (full width at half maximum). This laser operation demonstration for the GaN-based MC structure employing an HCG exhibited the advantages of HCGs in semiconductor lasers at wavelengths from green to ultraviolet.

scholarly journals Вертикально-излучающие лазеры спектрального диапазона 1.55 mum, сформированные методом спекания

2018 ◽  
Vol 44 (1) ◽  
pp. 59
Author(s):  
А.В. Бабичев ◽  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
С.А. Блохин ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Modulation Frequency ◽  
Cutoff Frequency ◽  
Optical Power ◽  
Single Mode ◽  
Threshold Current ◽  
Bragg Reflector ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Aperture Diameter

AbstractThe results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

Self-Focused Broad Area Distributed Bragg Reflector Laser Diodes

2005 ◽  
Author(s):  
G.S. Sokolovskii ◽  
I.M. Gadjiev ◽  
A.G. Deryagin ◽  
V.V. Dudelev ◽  
S.N. Losev ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Bragg Reflector ◽  
Broad Area ◽  
Distributed Bragg Reflector

scholarly journals Effect of band gap renormalization on threshold current and efficiency of a distributed Bragg reflector laser

2000 ◽  
Vol 76 (19) ◽  
pp. 2653-2655 ◽  
Author(s):  
H. Wenzel ◽  
A. Klehr ◽  
G. Erbert ◽  
J. Sebastian ◽  
G. Tränkle ◽  
...  
Keyword(s):  
Band Gap ◽  
Threshold Current ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector

Photonic Integrated Circuit Combining Two GaAs Distributed Bragg Reflector Laser Diodes for Generation of the Beat Signal

1992 ◽  
Vol 31 (Part 2, No. 2B) ◽  
pp. L183-L185 ◽  
Author(s):  
Minoru Maeda ◽  
Takaaki Hirata ◽  
Masayuki Suehiro ◽  
Mamoru Hihara ◽  
Akira Yamaguchi ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Laser Diodes ◽  
Bragg Reflector ◽  
Beat Signal ◽  
Distributed Bragg Reflector ◽  
Photonic Integrated Circuit

High-power singlemode AlGaAs distributed Bragg reflector laser diodes operating at 856 nm

1994 ◽  
Vol 30 (6) ◽  
pp. 496-497 ◽  
Author(s):  
J.S. Major ◽  
S. O'Brien ◽  
R.J. Lang ◽  
V. Gulgazov ◽  
D.F. Welch
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector
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