Low-threshold-current CW operation of 1.5 μm GaInAsP/InP bundle-integrated-guide distributed-Bragg-reflector (BIG-DBR) lasers

1985 ◽  
Vol 21 (17) ◽  
pp. 743 ◽  
Author(s):  
Y. Tohmori ◽  
K. Komori ◽  
S. Arai ◽  
Y. Suematsu
Keyword(s):  
Threshold Current ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Cw Operation ◽  
Low Threshold ◽  
Dbr Lasers

Low-threshold two-dimensional distributed Bragg reflector lasers

1986 ◽  
Vol 22 (8) ◽  
pp. 427
Author(s):  
T. Nigami ◽  
I. Suemune ◽  
Y. Kan ◽  
M. Yamanishi
Keyword(s):  
Bragg Reflector ◽  
Two Dimensional ◽  
Distributed Bragg Reflector ◽  
Low Threshold

Narrow spectral linewidth 1.5 mu m GaInAsP/InP distributed Bragg reflector (DBR) lasers

1989 ◽  
Vol 25 (6) ◽  
pp. 1280-1287 ◽  
Author(s):  
M. Takahashi ◽  
Y. Michitsuji ◽  
M. Yoshimura ◽  
Y. Yamazoe ◽  
H. Nishizawa ◽  
...  
Keyword(s):  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Spectral Linewidth ◽  
Dbr Lasers

scholarly journals Вертикально-излучающие лазеры спектрального диапазона 1.55 mum, сформированные методом спекания

2018 ◽  
Vol 44 (1) ◽  
pp. 59
Author(s):  
А.В. Бабичев ◽  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
С.А. Блохин ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Modulation Frequency ◽  
Cutoff Frequency ◽  
Optical Power ◽  
Single Mode ◽  
Threshold Current ◽  
Bragg Reflector ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Aperture Diameter

AbstractThe results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

scholarly journals Narrow Linewidth Distributed Bragg Reflectors Based on InGaN/GaN Laser

Micromachines ◽  
2019 ◽  
Vol 10 (8) ◽  
pp. 529 ◽  
Author(s):  
Xie ◽  
Li ◽  
Liao ◽  
Deng ◽  
Wang ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Visible Light ◽  
Communication Systems ◽  
Fdtd Method ◽  
Visible Light Communication ◽  
Bragg Reflector ◽  
Duty Ratio ◽  
Light Sources ◽  
Distributed Bragg Reflector ◽  
Dbr Lasers

A variety of emerging technologies, such as visible light communication systems, require narrow linewidths and easy-to-integrate light sources. Such a requirement could be potentially fulfilled with the distributed Bragg reflector (DBR) lasers, which are also promising for the monolithical integration with other optical components. The InGaN/GaN-based surface etched DBR is designed and optimized using the finite-difference-time-domain (FDTD) method to obtain very narrow-band reflectors that can serve as a wavelength filter. The results reveal that the ultimate reflectivity depends on the grating period and duty ratio of the DBR. Based on the design, the DBR lasers with various duty ratios are fabricated, specifically, the 19th, 13th and 3rd order DBR grating with duty ratio set as 50%/75%/95%. The minimum linewidth could be achieved at 0.45 nm from the 19th order grating with a 75% duty ratio. For comparison, the Fabry–Pérot (F–P) based on the same indium gallium nitride/gallium nitride (InGaN/GaN) epitaxial wafer are fabricated. The full width at half maximum (FWHM) of the DBR laser shrank by 65% compared to that of the conventional F–P laser, which might be helpful in the application of the visible light communication system.

scholarly journals Effect of band gap renormalization on threshold current and efficiency of a distributed Bragg reflector laser

2000 ◽  
Vol 76 (19) ◽  
pp. 2653-2655 ◽  
Author(s):  
H. Wenzel ◽  
A. Klehr ◽  
G. Erbert ◽  
J. Sebastian ◽  
G. Tränkle ◽  
...  
Keyword(s):  
Band Gap ◽  
Threshold Current ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector

Low Threshold Current CW Operation of InP/GaInAs Buried Heterostrueture Lasers

1980 ◽  
Vol 19 (12) ◽  
pp. L759-L762 ◽  
Author(s):  
Yoshio Noguchi ◽  
Kenichiro Takahei ◽  
Yoshio Suzuki ◽  
Haruo Nagai
Keyword(s):  
Threshold Current ◽  
Cw Operation ◽  
Low Threshold
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