scholarly journals Monolithic Integration of Tunnel Diode Based Inverters on Exact (001) Si Substrates

2016 ◽  
pp. 1-1 ◽  
Author(s):  
Yu Han ◽  
Qiang Li ◽  
Kei May Lau
Keyword(s):  
Tunnel Diode ◽  
Monolithic Integration ◽  
Si Substrates

Monolithic Integration of Si and GaAs Devices

1986 ◽  
Vol 67 ◽  
Author(s):  
H. K. Choi ◽  
G. W. Turner ◽  
B-Y. Tsaur ◽  
T. H. Windhorn
Keyword(s):  
Monolithic Integration ◽  
Double Heterostructure ◽  
Si Substrates ◽  
Gaas Substrates ◽  
Gaas Devices ◽  
Voltage Pulses ◽  
First Time

ABSTRACTIntegration of Si MOSFETs with GaAs MESFETs and with GaAs/AlGaAs double-heterostructure LEDs on monolithic GaAs/Si substrates is reported. Both Si MOSFETs and GaAs MESFETs show characteristics comparable to those for devices fabricated on separate Si and GaAs substrates. In LED/MOSFET integration, the cathode of each LED is connected with the drain of a MOSFET. This is the first time that Si and GaAs devices have been monolithically interconnected. LED modulation rates up to 27 Mbps have been achieved by applying a stream of voltage pulses to the MOSFET gate.

Monolithic integration of room-temperature cw GaAs/AlGaAs lasers on Si substrates via relaxed graded GeSi buffer layers

2003 ◽  
Vol 93 (1) ◽  
pp. 362-367 ◽  
Author(s):  
Michael E. Groenert ◽  
Christopher W. Leitz ◽  
Arthur J. Pitera ◽  
Vicky Yang ◽  
Harry Lee ◽  
...  
Keyword(s):  
Room Temperature ◽  
Monolithic Integration ◽  
Buffer Layers ◽  
Si Substrates

Monolithic integration of E/D-mode GaN MIS-HEMTs on ultrathin-barrier AlGaN/GaN heterostructure on Si substrates

2019 ◽  
Vol 12 (2) ◽  
pp. 024001 ◽  
Author(s):  
Sen Huang ◽  
Xinhua Wang ◽  
Xinyu Liu ◽  
Yuankun Wang ◽  
Jie Fan ◽  
...  
Keyword(s):  
Monolithic Integration ◽  
Si Substrates ◽  
Gan Heterostructure

Epitaxial Growth of Heterovalent GaAs/Ge and Applications in III-V Monolithic Integration on Si Substrates

2019 ◽  
Vol 3 (7) ◽  
pp. 561-568 ◽  
Author(s):  
Eugene Fitzgerald ◽  
Carl L. Dohrman ◽  
Kamesh Chilukuri ◽  
Michael J. Mori
Keyword(s):  
Epitaxial Growth ◽  
Monolithic Integration ◽  
Si Substrates

scholarly journals Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 mm (001) Si

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 330 ◽  
Author(s):  
Marina Baryshnikova ◽  
Yves Mols ◽  
Yoshiyuki Ishii ◽  
Reynald Alcotte ◽  
Han Han ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Defect Density ◽  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Threading Dislocation ◽  
Contrast Imaging ◽  
Si Substrates ◽  
Selective Area ◽  
Transmission Electron ◽  
The Impact

Nano-ridge engineering (NRE) is a novel heteroepitaxial approach for the monolithic integration of lattice-mismatched III-V devices on Si substrates. It has been successfully applied to GaAs for the realization of nano-ridge (NR) laser diodes and heterojunction bipolar transistors on 300 mm Si wafers. In this report we extend NRE to GaSb for the integration of narrow bandgap heterostructures on Si. GaSb is deposited by selective area growth in narrow oxide trenches fabricated on 300 mm Si substrates to reduce the defect density by aspect ratio trapping. The GaSb growth is continued and the NR shape on top of the oxide pattern is manipulated via NRE to achieve a broad (001) NR surface. The impact of different seed layers (GaAs and InAs) on the threading dislocation and planar defect densities in the GaSb NRs is investigated as a function of trench width by using transmission electron microscopy (TEM) as well as electron channeling contrast imaging (ECCI), which provides significantly better defect statistics in comparison to TEM only. An InAs/GaSb multi-layer heterostructure is added on top of an optimized NR structure. The high crystal quality and low defect density emphasize the potential of this monolithic integration approach for infrared optoelectronic devices on 300 mm Si substrates.

scholarly journals Preparation of Si substrates for monolithic integration of III−V quantum dots by selective MBE growth

2020 ◽  
Vol 1695 ◽  
pp. 012006
Author(s):  
N A Fominykh ◽  
M S Sobolev ◽  
I V Ilkiv ◽  
D V Mokhov ◽  
T N Berezovskaya ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Monolithic Integration ◽  
Mbe Growth ◽  
Si Substrates
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