Gate-First High-Performance Germanium nMOSFET and pMOSFET Using Low Thermal Budget Ion Implantation After Germanidation Technique

2016 ◽  
Vol 37 (3) ◽  
pp. 253-256 ◽  
Author(s):  
Wen-Hsin Chang ◽  
Hiroyuki Ota ◽  
Tatsuro Maeda
Keyword(s):  
Ion Implantation ◽  
High Performance ◽  
Thermal Budget ◽  
Low Thermal Budget

Low Thermal Budget Processing Of Organic Dielectrics

1995 ◽  
Vol 381 ◽  
Author(s):  
R. Sharangpani ◽  
R. Singh ◽  
K. C. Cherukuri ◽  
R.P.S. Thakur
Keyword(s):  
High Performance ◽  
Ultra Violet ◽  
High Energy ◽  
Curing Temperature ◽  
Film Stress ◽  
Thermal Budget ◽  
Low Thermal Budget ◽  
Rapid Isothermal Processing ◽  
Organic Dielectrics ◽  
Vacuum Ultra Violet

AbstractLow dielectric constant organic materials are ideal for use as interconnect dielectrics forintegrated circuits. As compared to silicon dioxide, organic dielectrics with K <3.84 reducepower dissipation, crosstilk and RC delays in interconnects. Curing is essential afterdeposition of these materials to initiate polymerization reactions and form films of desirableelectrical properties. For high performance and reliability, low thermal budget processing isa necessity. Rapid isothermal processing (RIP) based on the use of dual spectral sources isa potential technique to lower the thermal budget. In this paper, we demonstrate the role ofphotoeffects in the curing of polyimide films (K∼2.6) using a rapid isothermal processor witha dual spectral source (Tungsten Halogen and vacuum ultra violet (VUV) lamps) as a sourceof optical and thermal energy. Lamp configurations that allowed a greater availability of ultraviolet and vacuum ultra violet photons on the film to initiate physical and chemical processesallowed a lower curing temperature to achieve the same level of immidization. Furthermore, these samples also gave the lowest leakage current and film stress. Therefore, the rapidheating and cooling features of rapid isothermal processing in conjunction with lowerprocessing temperature through the use of high energy photons to enhance surface reactionsgive superior film properties

A Low Thermal Budget High Performance 0.25–0.18 µm Merged Logic Device and Dynamic Random Access Memory Application

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2162-2166
Author(s):  
Wen-Kuan Yeh ◽  
Yung-Chang Lin ◽  
Tung-Po Chen ◽  
Cheng-Tung Huang ◽  
Sun-Jay Chang ◽  
...  
Keyword(s):  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Logic Device ◽  
Access Memory ◽  
Thermal Budget ◽  
Low Thermal Budget

Low-Resistivity Amorphous Silicon for Contacts Using Low-Temperature Rapid Thermal Annealing

1992 ◽  
Vol 258 ◽  
Author(s):  
Lynnita Knoch ◽  
Gordon Tam ◽  
N. David Theodore ◽  
Ron Pennell
Keyword(s):  
Low Temperature ◽  
Ion Implantation ◽  
Grain Boundaries ◽  
Amorphous Silicon ◽  
Sheet Resistance ◽  
Rapid Thermal Annealing ◽  
Thermal Budget ◽  
Temperature Rapid Thermal Annealing ◽  
Low Thermal Budget ◽  
Polycrystalline Deposition

ABSTRACTFabrication of SiGe heterojunction bipolar transistors (HBTs) requires a low thermal budget to avoid relaxation of the strained SiGe base layer. Ion implantation is one of the most widely used techniques to achieve contacts. However, due to thermal budget constraints, low temperature rapid thermal annealing (RTA) cycles to activate these implants are insufficient to anneal out all of the implant damage. Polysilicon contacts provide an alternative to ion implantation, but are typically annealed at high temperatures (>950°C) to achieve low sheet resistivity. In this study, amorphous silicon and polycrystalline silicon films were implanted with boron, arsenic, or phosphorus and RTA'd at temperatures from 800°C to 950°C and compared to single crystal silicon with identical implants and RTA cycles. The films were characterized using four-point probe, Hall measurements, TEM (transmission electron microscopy), and SIMS (secondary-ion mass-spectrometry). TEM analysis shows that the amorphous deposition produces larger grains upon RTA due to more rapid grain growth than the polycrystalline deposition. The sheet resistance for the amorphous deposited films is much lower than that of the polycrystalline deposition for all implant conditions. Activations of the implants indicate that the arsenic and phosphorus segregate to the grain boundaries, while the boron does not. The segregation is more significant for the polycrystalline films than for the amorphous films and can be explained by the grain boundary area. For contacts to the SiGe HBT, which requires a low thermal budget, an amorphous deposited silicon film is advantageous over a polycrystalline film at low annealing temperatures because it has lower sheet resistance, less segregation to the grain boundaries, and produces larger grains.

Effect of Simplified-Single-Step Microwave Annealing in O2 Ambient for High Performance Solution-Processed In–Ga–Zn–O Thin Film Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4163-4169
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
High Performance ◽  
Stress Test ◽  
Single Step ◽  
Solution Processed ◽  
Thermal Budget ◽  
Microwave Annealing ◽  
Low Thermal Budget

In this study, we propose a simplified-single-step microwave annealing (S3-MWA) technique in an O2 ambient, which is a low thermal budget heat treatment method, for the application in solutionprocessed amorphous indium-gallium-zinc oxide (a-IGZO) thin films. For the application of solutionprocessed a-IGZO films in electronic devices, a multi-step post deposition annealing (PDA) process, which involves baking at low temperatures to vaporize the solvent, and high temperature conventional thermal annealing to remove defects in the film, is essential. To simplify the multi-step PDA process, we studied the possibility of reducing the thermal process temperature and time by replacing it with a single-step PDA process using microwave equipment. The electrical properties were compared to investigate the effect of the annealing method and ambient on solution-processed a-IGZO thin film transistors (TFTs). As a result, the S3-MWA-processed a-IGZO TFTs were found to exhibit superior electrical characteristics in comparison with the conventional PDA-processed devices. It was found that the O2 ambient process not only shortened the annealing time of S3-MWA but also improved the electrical properties. Furthermore, the S3-MWA was superior to the conventional PDA in the evaluation of device reliability under a gate bias stress test. The S3-MWA process in the O2 ambient was also responsible for improving the reliability of solution-processed a-IGZO TFTs. Therefore, we confirmed that the proposed S3-MWA in the O2 ambient is a more effective and promising technique than conventional PDA for the low thermal budget treatment of solution-processed a-IGZO TFTs.

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