Impact of Local Strain From Selective Epitaxial Germanium With Thin Si/SiGe Buffer on High-Performance p-i-n Photodetectors With a Low Thermal Budget

2007 ◽  
Vol 28 (11) ◽  
pp. 984-986 ◽  
Author(s):  
W. Y. Loh ◽  
J. Wang ◽  
J. D. Ye ◽  
R. Yang ◽  
H. S. Nguyen ◽  
...  
Keyword(s):  
High Performance ◽  
Local Strain ◽  
Thermal Budget ◽  
Low Thermal Budget

Low Thermal Budget Processing Of Organic Dielectrics

1995 ◽  
Vol 381 ◽  
Author(s):  
R. Sharangpani ◽  
R. Singh ◽  
K. C. Cherukuri ◽  
R.P.S. Thakur
Keyword(s):  
High Performance ◽  
Ultra Violet ◽  
High Energy ◽  
Curing Temperature ◽  
Film Stress ◽  
Thermal Budget ◽  
Low Thermal Budget ◽  
Rapid Isothermal Processing ◽  
Organic Dielectrics ◽  
Vacuum Ultra Violet

AbstractLow dielectric constant organic materials are ideal for use as interconnect dielectrics forintegrated circuits. As compared to silicon dioxide, organic dielectrics with K <3.84 reducepower dissipation, crosstilk and RC delays in interconnects. Curing is essential afterdeposition of these materials to initiate polymerization reactions and form films of desirableelectrical properties. For high performance and reliability, low thermal budget processing isa necessity. Rapid isothermal processing (RIP) based on the use of dual spectral sources isa potential technique to lower the thermal budget. In this paper, we demonstrate the role ofphotoeffects in the curing of polyimide films (K∼2.6) using a rapid isothermal processor witha dual spectral source (Tungsten Halogen and vacuum ultra violet (VUV) lamps) as a sourceof optical and thermal energy. Lamp configurations that allowed a greater availability of ultraviolet and vacuum ultra violet photons on the film to initiate physical and chemical processesallowed a lower curing temperature to achieve the same level of immidization. Furthermore, these samples also gave the lowest leakage current and film stress. Therefore, the rapidheating and cooling features of rapid isothermal processing in conjunction with lowerprocessing temperature through the use of high energy photons to enhance surface reactionsgive superior film properties

A Low Thermal Budget High Performance 0.25–0.18 µm Merged Logic Device and Dynamic Random Access Memory Application

2000 ◽  
Vol 39 (Part 1, No. 4B) ◽  
pp. 2162-2166
Author(s):  
Wen-Kuan Yeh ◽  
Yung-Chang Lin ◽  
Tung-Po Chen ◽  
Cheng-Tung Huang ◽  
Sun-Jay Chang ◽  
...  
Keyword(s):  
High Performance ◽  
Random Access ◽  
Random Access Memory ◽  
Dynamic Random Access Memory ◽  
Logic Device ◽  
Access Memory ◽  
Thermal Budget ◽  
Low Thermal Budget

Effect of Simplified-Single-Step Microwave Annealing in O2 Ambient for High Performance Solution-Processed In–Ga–Zn–O Thin Film Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4163-4169
Author(s):  
Seong-Kun Cho ◽  
Won-Ju Cho
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
High Performance ◽  
Stress Test ◽  
Single Step ◽  
Solution Processed ◽  
Thermal Budget ◽  
Microwave Annealing ◽  
Low Thermal Budget

In this study, we propose a simplified-single-step microwave annealing (S3-MWA) technique in an O2 ambient, which is a low thermal budget heat treatment method, for the application in solutionprocessed amorphous indium-gallium-zinc oxide (a-IGZO) thin films. For the application of solutionprocessed a-IGZO films in electronic devices, a multi-step post deposition annealing (PDA) process, which involves baking at low temperatures to vaporize the solvent, and high temperature conventional thermal annealing to remove defects in the film, is essential. To simplify the multi-step PDA process, we studied the possibility of reducing the thermal process temperature and time by replacing it with a single-step PDA process using microwave equipment. The electrical properties were compared to investigate the effect of the annealing method and ambient on solution-processed a-IGZO thin film transistors (TFTs). As a result, the S3-MWA-processed a-IGZO TFTs were found to exhibit superior electrical characteristics in comparison with the conventional PDA-processed devices. It was found that the O2 ambient process not only shortened the annealing time of S3-MWA but also improved the electrical properties. Furthermore, the S3-MWA was superior to the conventional PDA in the evaluation of device reliability under a gate bias stress test. The S3-MWA process in the O2 ambient was also responsible for improving the reliability of solution-processed a-IGZO TFTs. Therefore, we confirmed that the proposed S3-MWA in the O2 ambient is a more effective and promising technique than conventional PDA for the low thermal budget treatment of solution-processed a-IGZO TFTs.

Vacancy Engineering – An Ultra-Low Thermal Budget Method for High-Concentration 'Diffusionless' Implantation Doping

2008 ◽  
Vol 573-574 ◽  
pp. 295-304 ◽  
Author(s):  
Nicholas E.B. Cowern ◽  
Andrew J. Smith ◽  
Nicholas S. Bennett ◽  
Brian J. Sealy ◽  
Russell Gwilliam ◽  
...  
Keyword(s):  
Low Temperatures ◽  
High Performance ◽  
Silicon Films ◽  
Doping Profile ◽  
Junction Depth ◽  
High Concentration ◽  
Thermal Budget ◽  
Boron Implantation ◽  
Ultra Shallow Junctions ◽  
Low Thermal Budget

This paper reviews the physics and the potential application of ion-implanted vacancies for high-performance B-doped ultra-shallow junctions. By treatment of silicon films with vacancygenerating implants prior to boron implantation, electrically active boron concentrations approaching 1021 cm-3 can be achieved by Rapid Thermal Annealing at low temperatures, without the use of preamorphisation. Source/drain (S/D) junctions formed by advanced vacancy engineering implants (VEI) are activated far above solubility. Furthermore, in the case of appropriately engineered thin silicon films, this activation is stable with respect to deactivation and the doping profile is practically diffusionless. Sheet resistance Rs is predicted to stay almost constant with decreasing junction depth Xj, thus potentially outperforming other S/D engineering approaches at the ‘32 nm node’ and beyond.

High-Performance Schottky Contact Quantum-Well Germanium Channel pMOSFET With Low Thermal Budget Process

2016 ◽  
Vol 37 (1) ◽  
pp. 8-11 ◽  
Author(s):  
Chung-Chun Hsu ◽  
Yi-He Tsai ◽  
Che-Wei Chen ◽  
Jyun-Han Li ◽  
Yu-Hsien Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
Schottky Contact ◽  
Budget Process ◽  
Thermal Budget ◽  
Low Thermal Budget
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