2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

Filament control of field-enhanced WOx resistive memory toward low power applications

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942470 ◽

2017 ◽

Author(s):

Chao-Hung Wang ◽

Kuang-Hao Chiang ◽

Yu-Hsuan Lin ◽

Jau-Yi Wu ◽

Yung-Han Ho ◽

...

Keyword(s):

Low Power ◽

Resistive Memory

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A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942474 ◽

2017 ◽

Cited By ~ 1

Author(s):

Chih-Yang Lin ◽

Ying-Chen Chen ◽

Meiqi Guo ◽

Chih-Hung Pan ◽

Fu-Yuan Jin ◽

...

Keyword(s):

Vanadium Oxide ◽

Universal Model ◽

Threshold Switching ◽

Interface Type ◽

Comprehensive Study

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TCAD-based characterization of logic cells: Power, performance, area, and variability

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942453 ◽

2017 ◽

Cited By ~ 1

Author(s):

H.W. Karner ◽

C. Kernstock ◽

Z. Stanojevic ◽

O. Baumgartner ◽

F. Schanovsky ◽

...

Keyword(s):

Power Performance ◽

Performance Area ◽

Logic Cells

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On the physical modeling of random telegraph noise (RTN) amplitude in nanoscale MOSFETs: From ideal to statistical devices

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942475 ◽

2017 ◽

Author(s):

Zexuan Zhang ◽

Shaofeng Guo ◽

Zhe Zhang ◽

Runsheng Wang ◽

Ru Huang

Keyword(s):

Physical Modeling ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Nanoscale Mosfets

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Ion implantation after germanidation technique for low thermal budget Ge CMOS devices: From bulk Ge to UTB-GeOI substrate

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942482 ◽

2017 ◽

Author(s):

Wen Hsin Chang ◽

Toshifumi Irisawa ◽

Hiroyuki Ishii ◽

Hiroyuki Hattori ◽

Hiroyuki Ota ◽

...

Keyword(s):

Ion Implantation ◽

Thermal Budget ◽

Low Thermal Budget

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A design methodology of efficient on-chip wireless power transmission

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942476 ◽

2017 ◽

Cited By ~ 1

Author(s):

Salahuddin Raju ◽

Clarissa C. Prawoto ◽

Mansun Chan ◽

C. Patrick Yue

Keyword(s):

Design Methodology ◽

Power Transmission ◽

Wireless Power ◽

Wireless Power Transmission ◽

On Chip

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Investigation and comparison of design space for ultra-thin-body GeOI/SOI negative capacitance FETs

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942460 ◽

2017 ◽

Cited By ~ 3

Author(s):

Ho-Pei Lee ◽

Chien-Lin Yu ◽

Wei-Xiang You ◽

Pin Su

Keyword(s):

Design Space ◽

Thin Body ◽

Negative Capacitance

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Dense N over CMOS 6T SRAM cells using 3D Sequential Integration

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942495 ◽

2017 ◽

Author(s):

C.-M V. Lu ◽

C. Fenouillet-Beranger ◽

M. Brocard ◽

O. Billoint ◽

G. Cibrario ◽

...

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Development and electrical investigation of through glass via and through si via in 3D integration

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942477 ◽

2017 ◽

Author(s):

Geng-Ming Chang ◽

Shih-Wei Lee ◽

Ching-Yun Chang ◽

Kuan-Neng Chen

Keyword(s):

3D Integration ◽

Electrical Investigation

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STT-MRAM memories for IoT applications: Challenges and opportunities at circuit level and above

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) ◽

10.1109/vlsi-tsa.2017.7942448 ◽

2017 ◽

Cited By ~ 1

Author(s):

Massimo Alioto

Keyword(s):

Iot Applications ◽

Challenges And Opportunities

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2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Filament control of field-enhanced WOx resistive memory toward low power applications

A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector

TCAD-based characterization of logic cells: Power, performance, area, and variability

On the physical modeling of random telegraph noise (RTN) amplitude in nanoscale MOSFETs: From ideal to statistical devices

Ion implantation after germanidation technique for low thermal budget Ge CMOS devices: From bulk Ge to UTB-GeOI substrate

A design methodology of efficient on-chip wireless power transmission

Investigation and comparison of design space for ultra-thin-body GeOI/SOI negative capacitance FETs

Dense N over CMOS 6T SRAM cells using 3D Sequential Integration

Development and electrical investigation of through glass via and through si via in 3D integration

STT-MRAM memories for IoT applications: Challenges and opportunities at circuit level and above

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2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Filament control of field-enhanced WOx resistive memory toward low power applications

A universal model for interface-type threshold switching phenomena by comprehensive study of Vanadium oxide-based selector

TCAD-based characterization of logic cells: Power, performance, area, and variability

On the physical modeling of random telegraph noise (RTN) amplitude in nanoscale MOSFETs: From ideal to statistical devices

Ion implantation after germanidation technique for low thermal budget Ge CMOS devices: From bulk Ge to UTB-GeOI substrate

A design methodology of efficient on-chip wireless power transmission

Investigation and comparison of design space for ultra-thin-body GeOI/SOI negative capacitance FETs

Dense N over CMOS 6T SRAM cells using 3D Sequential Integration

Development and electrical investigation of through glass via and through si via in 3D integration

STT-MRAM memories for IoT applications: Challenges and opportunities at circuit level and above

2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
Latest Publications