Improvement of High-Frequency Characteristics of InGaAsSb-Base Double Heterojunction Bipolar Transistors by Inserting a Highly Doped GaAsSb Base Contact Layer

2015 ◽  
Vol 36 (7) ◽  
pp. 657-659 ◽  
Author(s):  
Norihide Kashio ◽  
Takuya Hoshi ◽  
Kenji Kurishima ◽  
Minoru Ida ◽  
Hideaki Matsuzaki
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Contact Layer ◽  
Bipolar Transistors ◽  
Frequency Characteristics ◽  
Double Heterojunction ◽  
Base Contact

High-frequency characteristics of low-temperature pseudo-heterojunction bipolar transistors

1993 ◽  
Vol 40 (2) ◽  
pp. 378-384 ◽  
Author(s):  
M. Miyamoto ◽  
K. Yano ◽  
Y. Tamaki ◽  
M. Aoki ◽  
T. Nishida ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors ◽  
Frequency Characteristics

17 Gbit/s pin-PD/decision circuit using InP/InGaAs double-heterojunction bipolar transistors

1996 ◽  
Vol 32 (4) ◽  
pp. 393 ◽  
Author(s):  
M. Yoneyama ◽  
E. Sano ◽  
S. Yamahata ◽  
Y. Matsuoka ◽  
M. Yaita
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Decision Circuit

scholarly journals Performance prediction of InP/GaAsSb double heterojunction bipolar transistors for THz applications

2021 ◽  
Vol 130 (3) ◽  
pp. 034502
Author(s):  
Xin Wen ◽  
Akshay Arabhavi ◽  
Wei Quan ◽  
Olivier Ostinelli ◽  
Chhandak Mukherjee ◽  
...  
Keyword(s):  
Performance Prediction ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Double Heterojunction ◽  
Thz Applications
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