Band-gap narrowing and high-frequency characteristics of Si/Ge/sub x/Si/sub 1-x/ heterojunction bipolar transistors formed by Ge ion implantation in Si

1998 ◽  
Vol 45 (7) ◽  
pp. 1531-1537 ◽  
Author(s):  
S.A. Lombardo ◽  
V. Privitera ◽  
A. Pinto ◽  
P. Ward ◽  
G. La Rosa ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Band Gap ◽  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors ◽  
Frequency Characteristics ◽  
Band Gap Narrowing

High-frequency characteristics of low-temperature pseudo-heterojunction bipolar transistors

1993 ◽  
Vol 40 (2) ◽  
pp. 378-384 ◽  
Author(s):  
M. Miyamoto ◽  
K. Yano ◽  
Y. Tamaki ◽  
M. Aoki ◽  
T. Nishida ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Bipolar Transistors ◽  
Frequency Characteristics

SiGe Heteroepitaxy for High Frequency Circuits

1998 ◽  
Vol 525 ◽  
Author(s):  
B. Tillack ◽  
D. Bolze ◽  
G. Fischer ◽  
G. Kissinger ◽  
D. Knoll ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Frequency ◽  
Defect Density ◽  
Process Capability ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Capability Indices ◽  
Data Points ◽  
B Doping ◽  
The Stability

ABSTRACTWe have determined the process capability of Low Pressure (Rapid Thermal) Chemical Vapor Deposition (LP(RT)CVD) of epitaxial Si/SiGe/Si stacks for heterojunction bipolar transistors (HIBTs). The transistor parameters primarily influenced by the epitaxial characteristics were measured for 600 identically processed 4” wafers. The results demonstrate that it is possible to control accurately the epitaxial process for a 25 nm thick graded SiGe base profile with 20 % Ge and very narrow B doping (5 nm). The pipe limited device yield of about 90 % for an emitter area of 104 μm2 indicates a very low defect density in the epitaxial layer stack. The process capability indices determined from about 40,000 data points demonstrate the stability and capability of the LP(RT)CVD epitaxy with regard to manufacturing requirements.

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