Enhancing Hysteresis in Graphene Devices Using Dielectric Screening

2012 ◽  
Vol 33 (8) ◽  
pp. 1195-1197 ◽  
Author(s):  
Kevin Brenner ◽  
T. J. Beck ◽  
James D. Meindl
Keyword(s):  
Dielectric Screening ◽  
Graphene Devices

scholarly journals Dielectric screening in perovskite photovoltaics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rui Su ◽  
Zhaojian Xu ◽  
Jiang Wu ◽  
Deying Luo ◽  
Qin Hu ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Low Voltage ◽  
Power Conversion ◽  
Surface Recombination ◽  
Open Circuit ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Dielectric Screening ◽  
Perovskite Photovoltaic ◽  
Reduced Surface

AbstractThe performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.

scholarly journals LayerPCM: An implicit scheme for dielectric screening from layered substrates

2021 ◽  
Vol 154 (22) ◽  
pp. 224114
Author(s):  
Jannis Krumland ◽  
Gabriel Gil ◽  
Stefano Corni ◽  
Caterina Cocchi
Keyword(s):  
Implicit Scheme ◽  
Dielectric Screening

Mapping current profiles of point-contacted graphene devices using single-spin scanning magnetometer

2021 ◽  
Vol 118 (3) ◽  
pp. 033101
Author(s):  
Myeongwon Lee ◽  
Seong Jang ◽  
Woochan Jung ◽  
Yuhan Lee ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Single Spin ◽  
Graphene Devices

scholarly journals The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening

ACS Nano ◽  
2021 ◽  
Author(s):  
Soohyung Park ◽  
Thorsten Schultz ◽  
Dongguen Shin ◽  
Niklas Mutz ◽  
Areej Aljarb ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Dielectric Screening ◽  
Influence Of Substrate

scholarly journals BOUNDARY CONDITIONS IN THE DIRAC APPROACH TO GRAPHENE DEVICES

2012 ◽  
Vol 14 ◽  
pp. 240-249 ◽  
Author(s):  
C.G. BENEVENTANO ◽  
E.M. SANTANGELO
Keyword(s):  
Boundary Conditions ◽  
Zeta Function ◽  
Continuum Limit ◽  
Casimir Energy ◽  
Local Boundary ◽  
Graphene Devices ◽  
The Continuum

We study a family of local boundary conditions for the Dirac problem corresponding to the continuum limit of graphene, both for nanoribbons and nanodots. We show that, among the members of such family, MIT bag boundary conditions are the ones which are in closest agreement with available experiments. For nanotubes of arbitrary chirality satisfying these last boundary conditions, we evaluate the Casimir energy via zeta function regularization, in such a way that the limit of nanoribbons is clearly determined.

Thomas-Fermi dielectric screening in semiconductors

1980 ◽  
Vol 21 (2) ◽  
pp. 632-633 ◽  
Author(s):  
P. Csavinszky
Keyword(s):  
Thomas Fermi ◽  
Dielectric Screening
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