scholarly journals LayerPCM: An implicit scheme for dielectric screening from layered substrates

2021 ◽  
Vol 154 (22) ◽  
pp. 224114
Author(s):  
Jannis Krumland ◽  
Gabriel Gil ◽  
Stefano Corni ◽  
Caterina Cocchi
Keyword(s):  
Implicit Scheme ◽  
Dielectric Screening

An implicit scheme for simulation of free surface non-Newtonian fluid flows on dynamically adapted grids

2021 ◽  
Vol 36 (3) ◽  
pp. 165-176
Author(s):  
Kirill Nikitin ◽  
Yuri Vassilevski ◽  
Ruslan Yanbarisov
Keyword(s):  
Free Surface ◽  
Numerical Model ◽  
Newtonian Fluid ◽  
Viscoelastic Fluid ◽  
Fluid Flows ◽  
Numerical Results ◽  
Implicit Scheme ◽  
New Approach

Abstract This work presents a new approach to modelling of free surface non-Newtonian (viscoplastic or viscoelastic) fluid flows on dynamically adapted octree grids. The numerical model is based on the implicit formulation and the staggered location of governing variables. We verify our model by comparing simulations with experimental and numerical results known from the literature.

scholarly journals Dielectric screening in perovskite photovoltaics

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Rui Su ◽  
Zhaojian Xu ◽  
Jiang Wu ◽  
Deying Luo ◽  
Qin Hu ◽  
...  
Keyword(s):  
Open Circuit Voltage ◽  
Low Voltage ◽  
Power Conversion ◽  
Surface Recombination ◽  
Open Circuit ◽  
Phonon Coupling ◽  
Electron Phonon Coupling ◽  
Dielectric Screening ◽  
Perovskite Photovoltaic ◽  
Reduced Surface

AbstractThe performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.

scholarly journals Fully Implicit Stress Update Algorithm for Distortion−Based Anisotropic Hardening with Cross−Loading Effect: Comparative Algorithmic Study and Application to Large−Size Forming Problem

2021 ◽  
Vol 11 (12) ◽  
pp. 5509
Author(s):  
Hongjin Choi ◽  
Seonghwan Choi ◽  
Soo-Chang Kang ◽  
Myoung-Gyu Lee
Keyword(s):  
Predictive Accuracy ◽  
Large Strain ◽  
Implicit Scheme ◽  
Loading Path ◽  
Plastic State ◽  
Loading Conditions ◽  
Integration Algorithm ◽  
Implicit Algorithm ◽  
Fully Implicit ◽  
Large Size

A fully implicit stress integration algorithm is developed for the distortional hardening model, namely the e−HAH model, capable of simulating cross−hardening/softening under orthogonal loading path changes. The implicit algorithm solves a complete set of residuals as nonlinear functions of stress, a microstructure deviator, and plastic state variables of the constitutive model, and provides a consistent tangent modulus. The number of residuals is set to be 20 or 14 for the continuum or shell elements, respectively. Comprehensive comparison programs are presented regarding the predictive accuracy and stability with different numerical algorithms, strain increments, material properties, and loading conditions. The flow stress and r−value evolutions under reverse/cross−loading conditions prove that the algorithm is robust and accurate, even with large strain increments. By contrast, the cutting−plane method and partially implicit Euler backward method, which are characterized by a reduced number of residuals, result in unstable responses under abrupt loading path changes. Finally, the algorithm is implemented into the finite element modeling of large−size, S−rail forming and the springback for two automotive steel sheets, which is often solved by a hybrid dynamic explicit–implicit scheme. The fully implicit algorithm performs well for the whole simulation with the solely static implicit scheme.

scholarly journals The Schottky–Mott Rule Expanded for Two-Dimensional Semiconductors: Influence of Substrate Dielectric Screening

ACS Nano ◽  
2021 ◽  
Author(s):  
Soohyung Park ◽  
Thorsten Schultz ◽  
Dongguen Shin ◽  
Niklas Mutz ◽  
Areej Aljarb ◽  
...  
Keyword(s):  
Two Dimensional ◽  
Dielectric Screening ◽  
Influence Of Substrate

Enhancing Hysteresis in Graphene Devices Using Dielectric Screening

2012 ◽  
Vol 33 (8) ◽  
pp. 1195-1197 ◽  
Author(s):  
Kevin Brenner ◽  
T. J. Beck ◽  
James D. Meindl
Keyword(s):  
Dielectric Screening ◽  
Graphene Devices

An Implicit Scheme for Shallow Water Flow with Wet Dry Interface

2018 ◽  
Vol 45 (1) ◽  
pp. 61-68 ◽  
Author(s):  
Hriday Mani Kalita ◽  
Arup Kumar Sarma
Keyword(s):  
Shallow Water ◽  
Water Flow ◽  
Implicit Scheme ◽  
Shallow Water Flow
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