Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications

2012 ◽  
Vol 33 (2) ◽  
pp. 236-238 ◽  
Author(s):  
Xinjun Liu ◽  
Sharif Md. Sadaf ◽  
Myungwoo Son ◽  
Jubong Park ◽  
Jungho Shin ◽  
...  
Keyword(s):  
Memory Switching ◽  
Threshold Switching ◽  
Memory Applications

scholarly journals A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

2019 ◽  
Vol 6 (10) ◽  
pp. 1900024 ◽  
Author(s):  
Qilin Hua ◽  
Huaqiang Wu ◽  
Bin Gao ◽  
Meiran Zhao ◽  
Yujia Li ◽  
...  
Keyword(s):  
Threshold Switching ◽  
Memory Applications

Threshold Switching in Te-SbO Films for the Selection Device of Crossbar Resistive Memory Applications

2015 ◽  
Vol 4 (8) ◽  
pp. N5-N8 ◽  
Author(s):  
J. W. Park ◽  
Y. S. Kim ◽  
S. W. Ryu ◽  
J. H. Lee ◽  
J. Heo ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Threshold Switching ◽  
Memory Applications

SET Characteristics of Phase Change Bridge Devices

2008 ◽  
Vol 1072 ◽  
Author(s):  
Daniel Krebs ◽  
Simone Raoux ◽  
Charles T. Rettner ◽  
Robert M. Shelby ◽  
Geoffrey W. Burr ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials ◽  
Random Access ◽  
Stable States ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Switching Material ◽  
The Difference ◽  
Memory Applications

ABSTRACTScaling studies have demonstrated that Phase Change Random Access Memory (PCRAM) is one of the most promising candidates for future non-volatile memory applications. The search for suitable phase change materials with optimized properties is therefore actively pursuit. In this paper, SET (crystallization) characteristics of an ultra fast switching material Ge15Sb85 in phase change memory bridge cell devices are presented. It was found that reproducible switching between two stable states with one decade resistance contrast and current pulses as short as 10 ns for SET and RESET (re-amorphization) operation is possible. Particular emphasis was placed on the difference in crystallization kinetics between the as-deposited and melt-quenched amorphous phase. Evidence is given for the existence of an electrical field as the critical parameter for threshold switching rather than a threshold voltage. For Ge15Sb85 a threshold switching field of 9MV/m was measured and it was shown that switching from the melt-quenched amorphous phase to the crystalline phase is about 600 times faster than crystallization from the as-deposited amorphous phase.

Analysis of the threshold switching mechanism of a Te–SbO selector device for crosspoint nonvolatile memory applications

2017 ◽  
Vol 111 (18) ◽  
pp. 183501 ◽  
Author(s):  
Young Seok Kim ◽  
Ji Woon Park ◽  
Jong Ho Lee ◽  
In Ah Choi ◽  
Jaeyeong Heo ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Switching Mechanism ◽  
Threshold Switching ◽  
Memory Applications

scholarly journals Negative Differential Resistance in Bidirectional Threshold Switching of Ag/HfOx/Pt Device

2020 ◽  
Author(s):  
zhiguo jiang ◽  
Dongliang Wang ◽  
Yan Li ◽  
Yong Zhang ◽  
Xinman Chen
Keyword(s):  
Negative Differential Resistance ◽  
Electronic Device ◽  
Differential Resistance ◽  
Memory Device ◽  
Resistive Memory ◽  
Relaxation Equation ◽  
Relaxation Time Constant ◽  
Memory Switching ◽  
Threshold Switching ◽  
Dynamic Conductance

Abstract In this work, the dependence of negative differential resistance (NDR) on compliance current (Icc) was investigated based on Ag/HfOx/Pt resistive memory device. Tunable conversion from bidirectional threshold switching (TS) to memory switching (MS) were achieved through enhancing Icc. NDR can be observed in TS as Icc is below 800μA but vanishes in MS. The switching voltages and readout windows of TS evolve with Icc. Furthermore, the dynamic conductance (dI/dV) as a function of time in NDR can be well illustrated by capacitor-like relaxation equation, and the relaxation time constant is significantly dependent on Icc. These phenomena were elucidated from viewpoint of nanofilament evolution controlled by Icc as well as nanocapacitor effects originated from nanofilament gap. The Icc-dependent NDR as well as conversion between TS and MS on Ag/HfOx/Pt resistive memory device indicates its potential application as a multifunctional electronic device.

Transition from nonvolatile bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts

2019 ◽  
Vol 7 (39) ◽  
pp. 12160-12169 ◽  
Author(s):  
Huiying Du ◽  
Jinghong Chen ◽  
Meilin Tu ◽  
Songwen Luo ◽  
Shangdong Li ◽  
...  
Keyword(s):  
Memory Switching ◽  
Threshold Switching ◽  
Bipolar Memory

The transition from bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts via changing electrodes from Au to Ag.

Room temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effect

2013 ◽  
Author(s):  
Hannes Mahne ◽  
Helge Wylezich ◽  
Stefan Slesazeck ◽  
Thomas Mikolajick ◽  
Jozef Vesely ◽  
...  
Keyword(s):  
Room Temperature ◽  
Switching Effect ◽  
Switching Device ◽  
Memory Switching ◽  
Threshold Switching

Reversible Transformation between Bipolar Memory Switching and Bidirectional Threshold Switching in 2D Layered K-Birnessite Nanosheets

2020 ◽  
Vol 12 (21) ◽  
pp. 24133-24140 ◽  
Author(s):  
Meilin Tu ◽  
Haipeng Lu ◽  
Songwen Luo ◽  
Hao Peng ◽  
Shangdong Li ◽  
...  
Keyword(s):  
Reversible Transformation ◽  
Memory Switching ◽  
Threshold Switching ◽  
Bipolar Memory

Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

2014 ◽  
Vol 24 (36) ◽  
pp. 5679-5686 ◽  
Author(s):  
Haitao Sun ◽  
Qi Liu ◽  
Congfei Li ◽  
Shibing Long ◽  
Hangbing Lv ◽  
...  
Keyword(s):  
Direct Observation ◽  
Conductive Filament ◽  
Memory Switching ◽  
Threshold Switching
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