scholarly journals A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications

2019 ◽  
Vol 6 (10) ◽  
pp. 1900024 ◽  
Author(s):  
Qilin Hua ◽  
Huaqiang Wu ◽  
Bin Gao ◽  
Meiran Zhao ◽  
Yujia Li ◽  
...  
Keyword(s):  
Threshold Switching ◽  
Memory Applications

Threshold Switching in Te-SbO Films for the Selection Device of Crossbar Resistive Memory Applications

2015 ◽  
Vol 4 (8) ◽  
pp. N5-N8 ◽  
Author(s):  
J. W. Park ◽  
Y. S. Kim ◽  
S. W. Ryu ◽  
J. H. Lee ◽  
J. Heo ◽  
...  
Keyword(s):  
Resistive Memory ◽  
Threshold Switching ◽  
Memory Applications

SET Characteristics of Phase Change Bridge Devices

2008 ◽  
Vol 1072 ◽  
Author(s):  
Daniel Krebs ◽  
Simone Raoux ◽  
Charles T. Rettner ◽  
Robert M. Shelby ◽  
Geoffrey W. Burr ◽  
...  
Keyword(s):  
Phase Change ◽  
Amorphous Phase ◽  
Phase Change Materials ◽  
Random Access ◽  
Stable States ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Switching Material ◽  
The Difference ◽  
Memory Applications

ABSTRACTScaling studies have demonstrated that Phase Change Random Access Memory (PCRAM) is one of the most promising candidates for future non-volatile memory applications. The search for suitable phase change materials with optimized properties is therefore actively pursuit. In this paper, SET (crystallization) characteristics of an ultra fast switching material Ge15Sb85 in phase change memory bridge cell devices are presented. It was found that reproducible switching between two stable states with one decade resistance contrast and current pulses as short as 10 ns for SET and RESET (re-amorphization) operation is possible. Particular emphasis was placed on the difference in crystallization kinetics between the as-deposited and melt-quenched amorphous phase. Evidence is given for the existence of an electrical field as the critical parameter for threshold switching rather than a threshold voltage. For Ge15Sb85 a threshold switching field of 9MV/m was measured and it was shown that switching from the melt-quenched amorphous phase to the crystalline phase is about 600 times faster than crystallization from the as-deposited amorphous phase.

Analysis of the threshold switching mechanism of a Te–SbO selector device for crosspoint nonvolatile memory applications

2017 ◽  
Vol 111 (18) ◽  
pp. 183501 ◽  
Author(s):  
Young Seok Kim ◽  
Ji Woon Park ◽  
Jong Ho Lee ◽  
In Ah Choi ◽  
Jaeyeong Heo ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Switching Mechanism ◽  
Threshold Switching ◽  
Memory Applications

Co-Occurrence of Threshold Switching and Memory Switching in $\hbox{Pt}/\hbox{NbO}_{x}/\hbox{Pt}$ Cells for Crosspoint Memory Applications

2012 ◽  
Vol 33 (2) ◽  
pp. 236-238 ◽  
Author(s):  
Xinjun Liu ◽  
Sharif Md. Sadaf ◽  
Myungwoo Son ◽  
Jubong Park ◽  
Jungho Shin ◽  
...  
Keyword(s):  
Memory Switching ◽  
Threshold Switching ◽  
Memory Applications

scholarly journals Threshold Switching Selectors: A Threshold Switching Selector Based on Highly Ordered Ag Nanodots for X‐Point Memory Applications (Adv. Sci. 10/2019)

2019 ◽  
Vol 6 (10) ◽  
pp. 1970058
Author(s):  
Qilin Hua ◽  
Huaqiang Wu ◽  
Bin Gao ◽  
Meiran Zhao ◽  
Yujia Li ◽  
...  
Keyword(s):  
Threshold Switching ◽  
Memory Applications

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

scholarly journals Steep-slope field-effect transistors with AlGaN/GaN HEMT and oxide-based threshold switching device

2019 ◽  
Vol 30 (21) ◽  
pp. 215201 ◽  
Author(s):  
Xuanqi Huang ◽  
Runchen Fang ◽  
Chen Yang ◽  
Kai Fu ◽  
Houqiang Fu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Steep Slope ◽  
Switching Device ◽  
Gan Hemt ◽  
Threshold Switching

Compact and ultrafast all optical 1-bit comparator based on wave interference and threshold switching methods

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Asghar Askarian
Keyword(s):  
Finite Difference Time Domain ◽  
Contrast Ratio ◽  
Logical Structure ◽  
Ring Resonators ◽  
Plane Wave Expansion ◽  
Threshold Switching ◽  
Wave Interference ◽  
All Optical ◽  
Fdtd Methods ◽  
Difference Time

Abstract In this study, we are going to design all optical 1-bit comparator by combining wave interference and threshold switching methods. The final structure composed of two nonlinear ring resonators and seven waveguides. The functionality of the suggested logical structure is analyzed and simulated by using plane wave expansion (PWE) and finite difference time domain (FDTD) methods. According to results, the proposed all optical 1-bit comparator has faster response and smaller footprint than all previous works. The maximum ON-OFF contrast ratio, delay time and area of the suggested optical comparator are about 16.67 dB, 1.8 ps, and 513 µm2, respectively.

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