Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology

2014 ◽  
Vol 24 (36) ◽  
pp. 5679-5686 ◽  
Author(s):  
Haitao Sun ◽  
Qi Liu ◽  
Congfei Li ◽  
Shibing Long ◽  
Hangbing Lv ◽  
...  
Keyword(s):  
Direct Observation ◽  
Conductive Filament ◽  
Memory Switching ◽  
Threshold Switching

scholarly journals Negative Differential Resistance in Bidirectional Threshold Switching of Ag/HfOx/Pt Device

2020 ◽  
Author(s):  
zhiguo jiang ◽  
Dongliang Wang ◽  
Yan Li ◽  
Yong Zhang ◽  
Xinman Chen
Keyword(s):  
Negative Differential Resistance ◽  
Electronic Device ◽  
Differential Resistance ◽  
Memory Device ◽  
Resistive Memory ◽  
Relaxation Equation ◽  
Relaxation Time Constant ◽  
Memory Switching ◽  
Threshold Switching ◽  
Dynamic Conductance

Abstract In this work, the dependence of negative differential resistance (NDR) on compliance current (Icc) was investigated based on Ag/HfOx/Pt resistive memory device. Tunable conversion from bidirectional threshold switching (TS) to memory switching (MS) were achieved through enhancing Icc. NDR can be observed in TS as Icc is below 800μA but vanishes in MS. The switching voltages and readout windows of TS evolve with Icc. Furthermore, the dynamic conductance (dI/dV) as a function of time in NDR can be well illustrated by capacitor-like relaxation equation, and the relaxation time constant is significantly dependent on Icc. These phenomena were elucidated from viewpoint of nanofilament evolution controlled by Icc as well as nanocapacitor effects originated from nanofilament gap. The Icc-dependent NDR as well as conversion between TS and MS on Ag/HfOx/Pt resistive memory device indicates its potential application as a multifunctional electronic device.

Transition from nonvolatile bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts

2019 ◽  
Vol 7 (39) ◽  
pp. 12160-12169 ◽  
Author(s):  
Huiying Du ◽  
Jinghong Chen ◽  
Meilin Tu ◽  
Songwen Luo ◽  
Shangdong Li ◽  
...  
Keyword(s):  
Memory Switching ◽  
Threshold Switching ◽  
Bipolar Memory

The transition from bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts via changing electrodes from Au to Ag.

Room temperature fabricated NbOx/Nb2O5 memory switching device with threshold switching effect

2013 ◽  
Author(s):  
Hannes Mahne ◽  
Helge Wylezich ◽  
Stefan Slesazeck ◽  
Thomas Mikolajick ◽  
Jozef Vesely ◽  
...  
Keyword(s):  
Room Temperature ◽  
Switching Effect ◽  
Switching Device ◽  
Memory Switching ◽  
Threshold Switching

Reversible Transformation between Bipolar Memory Switching and Bidirectional Threshold Switching in 2D Layered K-Birnessite Nanosheets

2020 ◽  
Vol 12 (21) ◽  
pp. 24133-24140 ◽  
Author(s):  
Meilin Tu ◽  
Haipeng Lu ◽  
Songwen Luo ◽  
Hao Peng ◽  
Shangdong Li ◽  
...  
Keyword(s):  
Reversible Transformation ◽  
Memory Switching ◽  
Threshold Switching ◽  
Bipolar Memory

Metal oxide resistive memory switching mechanism based on conductive filament properties

2011 ◽  
Vol 110 (12) ◽  
pp. 124518 ◽  
Author(s):  
G. Bersuker ◽  
D. C. Gilmer ◽  
D. Veksler ◽  
P. Kirsch ◽  
L. Vandelli ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Resistive Memory ◽  
Conductive Filament ◽  
Switching Mechanism ◽  
Memory Switching

Memory Switching and Threshold Switching in a 3D Nanoscaled NbOX System

2019 ◽  
Vol 40 (5) ◽  
pp. 718-721 ◽  
Author(s):  
Qing Luo ◽  
Xumeng Zhang ◽  
Jie Yu ◽  
Wei Wang ◽  
Tiancheng Gong ◽  
...  
Keyword(s):  
Memory Switching ◽  
Threshold Switching

scholarly journals Electroforming, Switching and Memory Effects in Oxide Thin Films

1977 ◽  
Vol 3 (4) ◽  
pp. 217-224 ◽  
Author(s):  
D. P. Oxley
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Metal Oxide ◽  
Chalcogenide Glasses ◽  
Sandwich Structures ◽  
Negative Resistance ◽  
Memory Effects ◽  
Memory Devices ◽  
Memory Switching ◽  
Threshold Switching

Experiments on electroforming of Metal-Oxide-Metal thin film sandwiches which have been electroformed to exhibit voltage-controlled negative resistance are summarized and an outline of recent evidence in favour of localized or filamentary conduction is given.A similar review is given of the experiments on oxide sandwich structures which have been formed to exhibit current-controlled negative resistance or threshold switching and memory switching. Current theories are reviewed briefly. Finally oxide memory devices are compared with those based upon the chalcogenide glasses.

Direct observation of conductive filament formation in Alq3 based organic resistive memories

2015 ◽  
Vol 118 (7) ◽  
pp. 075501 ◽  
Author(s):  
Y. Busby ◽  
S. Nau ◽  
S. Sax ◽  
E. J. W. List-Kratochvil ◽  
J. Novak ◽  
...  
Keyword(s):  
Direct Observation ◽  
Filament Formation ◽  
Conductive Filament
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