scholarly journals Effect of Argon-Oxygen Flow Rate Ratio in Magnetron Sputtering on Morphology and Hygroscopic Property of SnO2 Thin Film

2016 ◽  
pp. 6886-6901 ◽  
Author(s):  
M Faris Shahin Shahidan ◽  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Rate Ratio ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Flow Rate Ratio ◽  
Sno2 Thin Film ◽  
Hygroscopic Property

Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

2015 ◽  
Vol 73 (1) ◽  
Author(s):  
Jia Wei Low ◽  
Nafarizal Nayan ◽  
Mohd Zainizan Sahdan ◽  
Mohd Khairul Ahmad ◽  
Ali Yeon Md Shakaff ◽  
...  
Keyword(s):  
Thin Film ◽  
Copper Oxide ◽  
Flow Rate ◽  
Langmuir Probe ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Oxide Thin Film ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Copper Oxide Thin Film

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.

scholarly journals Influence of oxygen flow rate on photocatalytic TiO2 films deposited by rf magnetron sputtering

2011 ◽  
Vol 23 (2) ◽  
pp. 589-594 ◽  
Author(s):  
A. H. Chiou ◽  
C. G. Kuo ◽  
C. H. Huang ◽  
W. F. Wu ◽  
C. P. Chou ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Flow Rate ◽  
Rf Magnetron Sputtering ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Tio2 Films ◽  
Photocatalytic Tio2

The Optimization of TiN Film Deposited by DC Magnetron Sputtering Provided for Al Diffusion Barrier

2010 ◽  
Vol 93-94 ◽  
pp. 578-582
Author(s):  
A. Pankiew ◽  
Win Bunjongpru ◽  
N. Somwang ◽  
S. Porntheeraphat ◽  
Sirapat Pratontep ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Flow Rate ◽  
Diffusion Barrier ◽  
Rate Ratio ◽  
Growth Conditions ◽  
Flow Rate Ratio ◽  
Dc Magnetron Sputtering ◽  
Tin Films ◽  
Tin Film

Titanium nitride (TiN) film has been widely used as a diffusion barrier layer for VLSI contact metallization because TiN is an excellent barrier against inter-diffusion between Al and Si substrate or silicide. In this work, we studied the properties of TiN films deposited by DC magnetron sputtering with varying N2:Ar flow rate ratio in order to optimize growth conditions and film properties provided for Al diffusion barrier purpose. The TiN films were deposited at the constant pressure level and sputtering time. The crystalline orientation, composition and electrical properties of deposited TiN films were characterized by XRD, AES-depth profile and Four Point Probe measurement, respectively. The XRD results show that the deposited TiN film has two preferred orientations of TiN(111) and TiN(200) planes. The highest intensity of the TiN(111) plane was obtained when the N2:Ar flow rate ratio was 3:1. The electrical resistivity was increased when the N2:Ar flow rate ratio was decreased. The minimum electrical resistivity is 127.8 μΩ-cm when the N2:Ar flow rate ratio is 3:1.

Influence of Oxygen Flow Rate on the Properties of ITO Films Prepared by Low-Frequency (60 Hz) Magnetron Sputtering

2006 ◽  
Vol 459 (1) ◽  
pp. 221/[501]-229/[509]
Author(s):  
Sung Ho Lee ◽  
Do Kyung Lee ◽  
Seung Han Seo ◽  
Ji Hoon Oh ◽  
Sang Kooun Jung ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Flow Rate ◽  
Low Frequency ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Ito Films

Influence of oxygen flow rate on electrochromic property of WO 3 nanorods prepared by glancing reactive magnetron sputtering

2017 ◽  
Vol 4 (5) ◽  
pp. 6218-6223 ◽  
Author(s):  
Puenisara Limnonthakul ◽  
Wasutep Luangtip ◽  
Chokchai Puttharugsa ◽  
Ittisak Lutchanont ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Flow Rate ◽  
Oxygen Flow Rate ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Electrochromic Property ◽  
Reactive Magnetron

Effects of oxygen flow rate on the electrical stability of zinc oxynitride thin-film transistors

2017 ◽  
Vol 56 (2) ◽  
pp. 020301 ◽  
Author(s):  
Dae-Hwan Kim ◽  
Hwan-Seok Jeong ◽  
Chan-Yong Jeong ◽  
Sang-Hun Song ◽  
Hyuck-In Kwon
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Thin Film Transistors ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Electrical Stability
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